Surface modification of boron nitride by reduced graphene oxide for preparation of dielectric material with enhanced dielectric constant and well-suppressed dielectric loss

2016 ◽  
Vol 134 ◽  
pp. 191-200 ◽  
Author(s):  
Kai Wu ◽  
Chuxin Lei ◽  
Weixing Yang ◽  
Songgang Chai ◽  
Feng Chen ◽  
...  
Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 938 ◽  
Author(s):  
Weijie Liang ◽  
Xin Ge ◽  
Jianfang Ge ◽  
Tiehu Li ◽  
Tingkai Zhao ◽  
...  

The thermally conductive properties of silicone thermal grease enhanced by hexagonal boron nitride (hBN) nanosheets as a filler are relevant to the field of lightweight polymer-based thermal interface materials. However, the enhancements are restricted by the amount of hBN nanosheets added, owing to a dramatic increase in the viscosity of silicone thermal grease. To this end, a rational structural design of the filler is needed to ensure the viable development of the composite material. Using reduced graphene oxide (RGO) as substrate, three-dimensional (3D) heterostructured reduced graphene oxide-hexagonal boron nitride (RGO-hBN)-stacking material was constructed by self-assembly of hBN nanosheets on the surface of RGO with the assistance of binder for silicone thermal grease. Compared with hBN nanosheets, 3D RGO-hBN more effectively improves the thermally conductive properties of silicone thermal grease, which is attributed to the introduction of graphene and its phonon-matching structural characteristics. RGO-hBN/silicone thermal grease with lower viscosity exhibits higher thermal conductivity, lower thermal resistance and better thermal management capability than those of hBN/silicone thermal grease at the same filler content. It is feasible to develop polymer-based thermal interface materials with good thermal transport performance for heat removal of modern electronics utilising graphene-supported hBN as the filler at low loading levels.


2017 ◽  
Vol 328 ◽  
pp. 825-833 ◽  
Author(s):  
Hongling Li ◽  
Lin Jing ◽  
Roland Yingjie Tay ◽  
Siu Hon Tsang ◽  
Jinjun Lin ◽  
...  

2015 ◽  
Vol 17 (40) ◽  
pp. 26864-26874 ◽  
Author(s):  
Debabrata Chanda ◽  
Jaromír Hnát ◽  
Ana S. Dobrota ◽  
Igor A. Pašti ◽  
Martin Paidar ◽  
...  

The RGO-modified Ni electrode exhibited outstanding activity towards HER. DFT calculations indicate that H atoms, formed upon H2O discharge on Ni, spill onto the RGO, enabling continuous clearance of Ni-active sites.


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