Bioinspired strategy for tuning thermal stability of PVA via hydrogen-bond crosslink

2015 ◽  
Vol 118 ◽  
pp. 16-22 ◽  
Author(s):  
Ping'an Song ◽  
Zhiguang Xu ◽  
Yuan Lu ◽  
Qipeng Guo
Keyword(s):  
Thermal Stability ◽  
Hydrogen Bond ◽  
Thermal Stability Of

scholarly journals THERMAL CHARACTERISTIC EVALUATION OF DIFFERENT ASCORBIC ACID CRYSTAL HABITS

2018 ◽  
Vol 3 (1) ◽  
pp. 50-59
Author(s):  
S. Hassan ◽  
F. Adam ◽  
M.R. Abu Bakar
Keyword(s):  
Thermal Stability ◽  
Hydrogen Bond ◽  
Ascorbic Acid ◽  
Thermal Characteristic ◽  
Intermolecular Forces ◽  
Crystal Habit ◽  
Gravimetric Analysis ◽  
High Hydrogen ◽  
Acid Crystal ◽  
Thermal Stability Of

Melting temperature (Tmelt) and enthalpy of fussion (ΔHf ) are important parameters to determine the quality and the thermal stability of active pharmaceutical ingredient (API) crystals. In this study, different habit of ascorbic acid was prepared by using different polar solvents namely water, methanol, ethanol and 2-propanol. Ascorbic acid crystal was then been physically and thermally characterised by using microscopic analysis, thermo gravimetric analysis (TGA) and differential scanning calometry analysis (DSC). This provides an insight into the formation of crystal habit across four different polar protic solvents. The ascorbic acid is found to grow as a cubic or prism crystal when grown in water that provides high hydrogen bond between solvent and solute. As the polarity of the solvents decrease, the hydrogen bond weaken and the width of the crystal become narrower, forming almost a needle like crystal. The thermal stability of ascorbic acid crystal is found to be the most stable when ascorbic acid is crystallized from water (prism) and the weakest from 2-propanol (needle) due to the molecule arrangement in crystal lattice in which resulted from decreasing intermolecular forces in the liquid phase

scholarly journals Contribution of a Hydrogen Bond to the Thermal Stability of the Mutant Human Lysozyme C77/95S.

1994 ◽  
Vol 17 (5) ◽  
pp. 612-616
Author(s):  
Hirofumi YAMADA ◽  
Eiko KANAYA ◽  
Yoshio UENO ◽  
Morio IKEHARA ◽  
Haruki NAKAMURA ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Hydrogen Bond ◽  
Human Lysozyme ◽  
Thermal Stability Of

Polarization of Intraprotein Hydrogen Bond Is Critical to Thermal Stability of Short Helix

2011 ◽  
Vol 116 (1) ◽  
pp. 549-554 ◽  
Author(s):  
Ya Gao ◽  
Xiaoliang Lu ◽  
Li L. Duan ◽  
John Z. H. Zhang ◽  
Ye Mei
Keyword(s):  
Thermal Stability ◽  
Hydrogen Bond ◽  
Thermal Stability Of

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Time and thermal stability of magnetic properties of amorphous Fe80TM3B17 alloys

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas
Keyword(s):  
Thermal Stability ◽  
Magnetic Properties ◽  
Thermal Stability Of
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