scholarly journals A numerical study of the motion of a neutrally buoyant cylinder in two dimensional shear flow

2013 ◽  
Vol 87 ◽  
pp. 57-66 ◽  
Author(s):  
Tsorng-Whay Pan ◽  
Shih-Lin Huang ◽  
Shih-Di Chen ◽  
Chin-Chou Chu ◽  
Chien-Cheng Chang
Keyword(s):  
Shear Flow ◽  
Numerical Study ◽  
Two Dimensional ◽  
Neutrally Buoyant

scholarly journals The motion of a neutrally buoyant particle of an elliptic shape in two dimensional shear flow: A numerical study

2015 ◽  
Vol 27 (8) ◽  
pp. 083303 ◽  
Author(s):  
Shih-Lin Huang ◽  
Shih-Di Chen ◽  
Tsorng-Whay Pan ◽  
Chien-Cheng Chang ◽  
Chin-Chou Chu
Keyword(s):  
Shear Flow ◽  
Numerical Study ◽  
Two Dimensional ◽  
Neutrally Buoyant

Numerical Study of Surfactant-Laden Drop-Drop Interactions

2011 ◽  
Vol 10 (2) ◽  
pp. 453-473 ◽  
Author(s):  
Jian-Jun Xu ◽  
Zhilin Li ◽  
John Lowengrub ◽  
Hongkai Zhao
Keyword(s):  
Shear Flow ◽  
Level Set ◽  
Capillary Number ◽  
Minimum Distance ◽  
Numerical Study ◽  
Contact Region ◽  
Monotone Function ◽  
Three Dimensional ◽  
Two Dimensional ◽  
Immersed Interface

AbstractIn this paper, we numerically investigate the effects of surfactant on drop-drop interactions in a 2D shear flow using a coupled level-set and immersed interface approach proposed in (Xu et al., J. Comput. Phys., 212 (2006), 590-616). We find that surfactant plays a critical and nontrivial role in drop-drop interactions. In particular, we find that the minimum distance between the drops is a non-monotone function of the surfactant coverage and Capillary number. This non-monotonic behavior, which does not occur for clean drops, is found to be due to the presence of Marangoni forces along the drop interfaces. This suggests that there are non-monotonic conditions for coalescence of surfactant-laden drops, as observed in recent experiments of Leal and co-workers. Although our study is two-dimensional, we believe that drop-drop interactions in three-dimensional flows should be qualitatively similar as the Maragoni forces in the near contact region in 3D should have a similar effect.

Two-dimensional numerical study of flow dynamics of a nucleated cell tethered under shear flow

2014 ◽  
Vol 119 ◽  
pp. 236-244 ◽  
Author(s):  
Zheng Yuan Luo ◽  
Long He ◽  
Shu Qi Wang ◽  
Savas Tasoglu ◽  
Feng Xu ◽  
...  
Keyword(s):  
Shear Flow ◽  
Numerical Study ◽  
Flow Dynamics ◽  
Two Dimensional

Numerical Study on Two-dimensional Magnetic Photonic Crystals Made of Magnetized Ferrites

PIERS Online ◽  
2007 ◽  
Vol 3 (3) ◽  
pp. 305-307 ◽  
Author(s):  
Jie Xu ◽  
Ping Chen ◽  
Yue Shi ◽  
Xin-Yi Ji ◽  
Ai-Min Jiang ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Numerical Study ◽  
Two Dimensional ◽  
Magnetic Photonic Crystals

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

Sign in / Sign up

Export Citation Format

Share Document