i-CELIV technique for investigation of charge carriers transport properties

2016 ◽  
Vol 478 ◽  
pp. 126-129 ◽  
Author(s):  
J. Važgėla ◽  
K. Genevičius ◽  
G. Juška
Keyword(s):  
Transport Properties ◽  
Charge Carriers

scholarly journals Structure and transport properties of triple-conducting BaxSr1−xTi1−yFeyO3−δ oxides

RSC Advances ◽  
2021 ◽  
Vol 11 (32) ◽  
pp. 19570-19578
Author(s):  
T. Miruszewski ◽  
K. Dzierzgowski ◽  
P. Winiarz ◽  
D. Jaworski ◽  
K. Wiciak-Pawłowska ◽  
...  
Keyword(s):  
Transport Properties ◽  
Charge Carriers ◽  
Conducting Oxides ◽  
Oxygen Ions ◽  
Perovskite Materials

BaxSr1−xTi1−yFeyO3−δ-based perovskite materials with different barium and iron contents are reported as triple conducting oxides (TCOs), which may conduct three charge carriers: oxygen ions, protons and electrons/holes.

Thermomagnetic transport properties ofNd1.85Ce0.15CuO4+δfilms: Evidence for two types of charge carriers

1997 ◽  
Vol 56 (21) ◽  
pp. 14149-14156 ◽  
Author(s):  
P. Fournier ◽  
X. Jiang ◽  
W. Jiang ◽  
S. N. Mao ◽  
T. Venkatesan ◽  
...  
Keyword(s):  
Transport Properties ◽  
Charge Carriers ◽  
Thermomagnetic Transport

Charge Transport Properties of a Partially Reduced V2O5 Xerogel Intercalated with a Polymer Electrolyte

1995 ◽  
Vol 393 ◽  
Author(s):  
Joyce Albritton Thomas ◽  
Grant M. Kloster ◽  
D. Shriver ◽  
C. R. Kannewurf
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Polymer Electrolyte ◽  
Variable Temperature ◽  
Sol Gel ◽  
Electronic Conductivity ◽  
Charge Carriers ◽  
Electronic Charge ◽  
Ionic Charge ◽  
Intimate Contact

ABSTRACTRecently, there has been considerable interest in advanced materials and processing techniques for practical applications. V2O5 xerogels have generated much attention because they are layered materials that undergo reversible redox intercalation with lithium. The sol-gel process has been used to intercalate V2O5 xerogels with the polymer electrolyte, oxymethylene linked poly(ethylene oxide) - lithium triflate [(a-PEO)n(LiCF3SO3)]. The resulting nanocomposite is a mixed ionic-electronic conductor in which the ionic charge carriers in the polymer electrolyte are in intimate contact with the electronic charge carriers in the V205 xerogel. Variable-temperature electronic conductivity and thermoelectric power measurements have been performed to examine the charge transport properties.

scholarly journals An insight into the charge carriers transport properties and electric field distribution of CH3NH3PbBr3 thick single crystals

2020 ◽  
Vol 117 (4) ◽  
pp. 041904 ◽  
Author(s):  
Oriane Baussens ◽  
Loli Maturana ◽  
Smaïl Amari ◽  
Julien Zaccaro ◽  
Jean-Marie Verilhac ◽  
...  
Keyword(s):  
Electric Field ◽  
Transport Properties ◽  
Single Crystals ◽  
Field Distribution ◽  
Electric Field Distribution ◽  
Charge Carriers ◽  
Insight Into

scholarly journals Deciphering the effect of traps on electronic charge transport properties of methylammonium lead tribromide perovskite

2020 ◽  
Vol 6 (37) ◽  
pp. eabb6393
Author(s):  
Artem Musiienko ◽  
Jindřich Pipek ◽  
Petr Praus ◽  
Mykola Brynza ◽  
Eduard Belas ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Charge Transport ◽  
Transport Properties ◽  
Critical Role ◽  
Charge Carriers ◽  
Electronic Charge ◽  
Free Charge ◽  
Optoelectronic Materials ◽  
Halide Perovskites

Halide perovskites have undergone remarkable developments as highly efficient optoelectronic materials for a variety of applications. Several studies indicated the critical role of defects on the performance of perovskite devices. However, the parameters of defects and their interplay with free charge carriers remain unclear. In this study, we explored the dynamics of free holes in methylammonium lead tribromide (MAPbBr3) single crystals using the time-of-flight (ToF) current spectroscopy. By combining ToF spectroscopy and Monte Carlo simulation, three energy states were detected in the bandgap of MAPbBr3. In addition, we found the trapping and detrapping rates of free holes ranging from a few microseconds to hundreds of microseconds. Contrary to previous studies, we revealed a strong detrapping activity of traps. We showed that these traps substantially affect the transport properties of MAPbBr3, including mobility and mobility-lifetime product. Our results provide an insight on charge transport properties of perovskite semiconductors.

Effect of Microstructure on Transport Properties of Nano-Polycrystalline La0.7Sr0.3MnO3-D Films

2010 ◽  
Vol 150-151 ◽  
pp. 693-697
Author(s):  
Shao Qun Jiang ◽  
Xin Xin Ma ◽  
Jian Dang Liu ◽  
Bang Jiao Ye ◽  
Ze Hua Wang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Charge Carriers ◽  
Tunneling Effect ◽  
Thermal Excitation ◽  
Working Pressure ◽  
Metal Insulator ◽  
Transport Characteristic ◽  
Vacancy Defects ◽  
Minimum Resistance ◽  
Effect Of Microstructure

The effect of microstructure on transport properties of nano-polycrystalline La0.7Sr0.3MnO3-δ films, which were prepared by DC magnetron sputtering at various working pressures and followed by air annealing at 973K for 1h, has been investigated. The result indicates that the change of working pressure can change the microstructure, metal-insulator transition temperature (TIM) and peak resistance but does not change the transport mechanism for the films. The vacancy defects have an important effect on the transport properties of the films. Higher working pressure tends to decrease the density of vacancy defects. Low vacancy defects account for the high TIM and low resistance of the films. In the region of T > TIM, the charge carriers are moving in variable range hopping mode. The behavior of resistance decreasing with the increasing of temperature at low temperature (T<23K) can be explained on the basis of thermal excitation tunneling effect. The minimum resistance results from the combined effect of the tunneling effect and intrinsic metallic transport characteristic of the films.

Transport Properties of CaSi2 and Ca2Si Thin Films

2020 ◽  
Vol 312 ◽  
pp. 3-8
Author(s):  
L. Dermenji ◽  
K.G. Lisunov ◽  
Konstantin Nickolaevich Galkin ◽  
Dmitrii L. Goroshko ◽  
E.A. Chusovitin ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Fields ◽  
Transport Properties ◽  
Hall Coefficient ◽  
Charge Carriers ◽  
The Other ◽  
Temperature Range ◽  
Other Hand ◽  
Complex Dependence

Resistivity, r (T), and Hall coefficient in weak (B < 1 T) magnetic fields, R (T), are investigated in Ca2Si and CaSi2 films at temperatures T between ~ 20 - 300 K. In CaSi2, r (T) is typical of metals increasing with T within the whole temperature range. On the other hand, the resistivity of Ca2Si is pertinent of semiconductors. Namely, it is activated below T ~ 200 K, exhibiting different slopes of ln r vs. T -1 plots at lower and higher T, and a weak increase between T ~ 200 - 300 K. Both materials demonstrate a complex dependence of R (T), including a change of the sign. Transport properties above have been analyzed assuming two groups of charge carriers, electrons and holes, contributing them.

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