Influence of relative confinement oscillation and concomitant oscillatory impurity domain on excitation profile of doped quantum dots

2012 ◽  
Vol 400 ◽  
pp. 44-50 ◽  
Author(s):  
Nirmal Kr Datta ◽  
Suvajit Pal ◽  
Manas Ghosh
2013 ◽  
Vol 2013 ◽  
pp. 1-7
Author(s):  
Suvajit Pal ◽  
Manas Ghosh

Excitation in quantum dots is an important phenomenon. Realizing the importance we investigate the excitation behavior of a repulsive impurity-doped quantum dot induced by simultaneous oscillations of impurity potential and spatial stretch of impurity domain. The impurity potential has been assumed to have a Gaussian nature. The ratio of two oscillations (η) has been exploited to understand the nature of excitation rate. Indeed it has been found that the said ratio could fabricate the excitation in a remarkable way. The present study also indicates attainment of stabilization in the excitation rate as soon as η surpasses a threshold value regardless of the dopant location. However, within the stabilization zone we also observe maximization in the excitation rate at some typical location of dopant incorporation. The critical analysis of pertinent impurity parameters provides important perception about the physics behind the excitation process.


2019 ◽  
Vol 7 (47) ◽  
pp. 14788-14797 ◽  
Author(s):  
Tian Qiao ◽  
David Parobek ◽  
Dong Hee Son

This work discusses the photophysical pathways in doped quantum dots responsible for generating photons of non-exciton origin and hot electrons.


Author(s):  
R√©mi Beaulac ◽  
Stefan Ochsenbein ◽  
Daniel Gamelin

JETP Letters ◽  
2019 ◽  
Vol 109 (4) ◽  
pp. 270-275
Author(s):  
A. F. Zinovieva ◽  
V. A. Zinovyev ◽  
N. P. Stepina ◽  
A. V. Katsuba ◽  
A. V. Dvurechenskii ◽  
...  

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