High open-circuit voltage in UV photovoltaic cell based on polymer/inorganic bilayer structure

2006 ◽  
Vol 330 (3) ◽  
pp. 501-505 ◽  
Author(s):  
Hui Jin ◽  
Yanbing Hou ◽  
Xianguo Meng ◽  
Feng Teng
2013 ◽  
Vol 103 (20) ◽  
pp. 203902 ◽  
Author(s):  
David Bilby ◽  
Jojo Amonoo ◽  
Matthew E. Sykes ◽  
Bradley Frieberg ◽  
Bingyuan Huang ◽  
...  

2010 ◽  
Vol 101 (4) ◽  
pp. 727-733
Author(s):  
Ken Takayama ◽  
Senri Soma ◽  
Taiji Inoue ◽  
Hideaki Kakinuma ◽  
Takashi Haraguchi ◽  
...  

2015 ◽  
Vol 83 ◽  
pp. 61-70 ◽  
Author(s):  
Ezzat Sadat Kouhsari ◽  
Rahim Faez ◽  
Maedeh Akbari Eshkalak

Author(s):  
Dr. Gaurav Srivastava

This paper defines the design of UPS system with the help of sun tracking system, as a source for chargingthe battery to provide the backup power when the regular power source fails. This authentication is provided by obtaining the theoretical calculation of output power, output current and output voltage which are developed due to solar radiations. In this system, if the primary load is not in use, then the power is automatically switching over to secondary load. Basically, an UPS is electrical equipment that is used at the time of emergency. The battery bank is charged with the help of solar photovoltaic cell. This paper proposed an approach to understand the peak power point of the sun based on analysis of the open-circuit voltage of the PV panel. This project provides the power supply to a load which is uninterruptible, by automatically selecting the supply from the main source or inverter.


1985 ◽  
Vol 63 (6) ◽  
pp. 767-771 ◽  
Author(s):  
C. H. Champness ◽  
K. Ghoneim ◽  
J. K. Chen

Studies previously carried out to improve the Se–CdO photovoltaic cell have emphasized optimization of the deposition of the CdO by direct current (DC) reactive sputtering. Attention has now been turned towards improving the deposition, doping, and heat treatment of the polycrystalline selenium base. It has been found that heat treatment of the selenium film on its substrate of aluminum and bismuth in air or oxygen prior to CdO deposition results in an increase in the illuminated open-circuit voltage (Voc) of the cell. The effect increased with increase of annealing temperature from 150 to 195 °C and in going from dry to wet oxygen. No increase in Voc was found by heating in nitrogen. The effect could be due to the formation of higher stoichiometric and hence higher resistivity CdO at the Se–CdO junction, arising from the presence of extra oxygen on the selenium surface.


2019 ◽  
Vol 7 (46) ◽  
pp. 26533-26539 ◽  
Author(s):  
Zicheng Ding ◽  
Ruyan Zhao ◽  
Yingjian Yu ◽  
Jun Liu

An all-polymer photovoltaic cell shows an efficiency of 27.4% with a high open-circuit voltage of 1.16 V under indoor light illumination.


Author(s):  
Darrell Cheu ◽  
Thomas Adams ◽  
Shripad Revankar

There is an increasing need for devices that can be powered for extended periods of time where it is difficult or impossible to maintain or replace, such as pacemakers, long term space flight or undisturbed sensors for military use. Presently, most portable devices run off a Lithium-Iodide battery, which gives a high amount of power but could only last approximately 2 to 5 years, requiring frequent replacement. However, replacement is unnecessary for betavoltaic cells as they can last at least 20 years. City Labs Inc. received a general license for commercially available tritium betavoltaic cells that were validated at extreme temperatures without permanent degradation. To fully determine the effectiveness of a betavoltaic cell, the electrical performance (I-V curves) of three betavoltaics were evaluated while temperatures were ramped up and down from −30°C to 70°C. Short circuit current, open circuit voltage, maximum power and fill factor were used to compare electrical performance. Results indicated that the open-circuit voltage and maximum power decreased as temperature increased, suggesting that betavoltaic cells are suited for cold environments below 0°C, such as during nightfall when a photovoltaic cell may not be used.


2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.


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