Experimental and theoretical study on the fluidization behaviors of iron powder at high temperature

2014 ◽  
Vol 118 ◽  
pp. 50-59 ◽  
Author(s):  
Chao Lei ◽  
Qingshan Zhu ◽  
Hongzhong Li
2014 ◽  
Vol 151 (1) ◽  
pp. 99-107 ◽  
Author(s):  
Bin Xu ◽  
Bin Tian ◽  
Mei-zhe Lv ◽  
Xiao-hong Fan ◽  
Xiao-fei Guo ◽  
...  

2016 ◽  
Vol 120 (40) ◽  
pp. 10547-10552 ◽  
Author(s):  
Fereshteh Samiee ◽  
Federico N. Pedron ◽  
Dario A. Estrin ◽  
Liliana Trevani

2005 ◽  
Vol 19 (01n03) ◽  
pp. 427-429
Author(s):  
Y. P. ZHANG ◽  
Y. ZHAO

As the information technology grows up and its application penetrates into every area of this world, how to faster and more efficiently transport people and goods is becoming the new social demand, which indicates a new revolution on advanced transportation technology being brewed. High-temperature Superconductivity Maglev (HTSM) is one with the best development potential among most transportation technologies. It could be used in many advanced transportation fields, overcoming the key contradiction and shortcoming of the current transportation patterns such as train, automobile and airplane. On the other hand, HTSM will promote theoretical study and technology exploitation on superconductivity. HTSM's applications in a large scale will bring up profound effect on the forming and development of the superconductivity industry.


1990 ◽  
Vol 9 (2) ◽  
pp. 246-248 ◽  
Author(s):  
S. V. Ilango ◽  
P. Ramakrishnan

2018 ◽  
Vol 6 ◽  
Author(s):  
Ye Liu ◽  
Zhengfei Yu ◽  
Jingxuan Zhu ◽  
Song Wang ◽  
Dong Xu ◽  
...  

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Fathi Aqra ◽  
Ahmed Ayyad

This paper deals with theoretical approach to surface tension of molten silicon and germanium, and contributes to this field, which is very important. A theoretical calculation for determining the surface tension of high-temperature semiconductor melts, such as molten silicon and germanium, in the temperature range 1687–1825 K and 1211–1400 K, respectively, is described. The calculated temperature-dependence surface tension data for both Si and Ge are expressed as and (mJ m−2), respectively. These values are in consistence with the reported experimental data (720–875 for Si and 560–632 mJ m−2 for Ge). The calculated surface tension for both elements decreases linearly with temperature.


Sign in / Sign up

Export Citation Format

Share Document