A phenomenological model for the gas phase flow in high-aspect-ratio stirred vessels: the role of small bubbles in non-coalescent and moderately viscous liquids

2005 ◽  
Vol 60 (8-9) ◽  
pp. 2239-2252 ◽  
Author(s):  
Davide Pinelli
2021 ◽  
Vol 128 ◽  
pp. 108558
Author(s):  
Yuyue Guo ◽  
Yangfei Hu ◽  
Xiaojiong Luo ◽  
Shudong Lin ◽  
Jiwen Hu ◽  
...  

2020 ◽  
Vol 38 (5) ◽  
pp. 053402
Author(s):  
Andrew Simon ◽  
Oscar van der Straten ◽  
Nicholas A. Lanzillo ◽  
Chih-Chao Yang ◽  
Takeshi Nogami ◽  
...  

2018 ◽  
Vol 47 (9) ◽  
pp. 2933-2938 ◽  
Author(s):  
G. V. Manohara ◽  
Li Li ◽  
Andrew Whiting ◽  
H. Chris Greenwell

Hybrid layered double hydroxide materials with high aspect ratio have been prepared by slow hydrolysis of metal hydroxides with hydrophobic anions.


2017 ◽  
Vol 139 (2) ◽  
Author(s):  
Zhenhai Pan ◽  
Justin A. Weibel ◽  
Suresh V. Garimella

Despite the demand for high-performance, two-phase cooling systems, high-fidelity simulations of flow boiling in complex microchannel geometries remains a challenging numerical problem. We conduct a first-principles-based simulation of an evaporating two-phase flow in a high-aspect-ratio microchannel with bends using a volume of fluid-based numerical model. For the case shown, the lower horizontal section of the microchannel has a constant flux of 20 W/cm2 applied to the wetted wall area (heat flux at the base of 133 W/cm2); HFE-7100 vapor and liquid enter the channel at 2 m/s. The three-dimensional channel geometry requires a refined near-wall numerical mesh to resolve thin liquid film flow features. The recently developed saturated-interface-volume phase change model (Int J Heat Mass Trans 93:945-956, 2016) is implemented for prediction of mass and energy exchange across the liquid-vapor interface at a low computational cost (~80 hr; 6-core parallelization on Intel Xeon E3-1245V3). The model reveals transport details including the interface shape and fluid velocity and temperature fields. The interfacial temperature remains fixed at saturation with smooth velocity contours near the interface. The highest evaporation flux is located in the thin liquid film region near the heated wall.


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