Rapid determination of reaction order and rate constants of an imine synthesis reaction using a mesoscale oscillatory baffled reactor

2013 ◽  
Vol 222 ◽  
pp. 282-291 ◽  
Author(s):  
Fatimah R. Mohd Rasdi ◽  
Anh N. Phan ◽  
Adam P. Harvey
Keyword(s):  
Rate Constants ◽  
Reaction Order ◽  
Rapid Determination ◽  
Synthesis Reaction

scholarly journals Kinetic Study of CaCO3 Precipitation Accelerated by High Voltage Impulse

2021 ◽  
Vol 43 (2) ◽  
pp. 125-134
Author(s):  
Damha Kim ◽  
In-Soung Chang
Keyword(s):  
Rate Constant ◽  
High Voltage ◽  
Rate Constants ◽  
Reaction Order ◽  
Reaction Rate Constant ◽  
Formation Reaction ◽  
Different Temperatures ◽  
Synthetic Solution ◽  
Scale Control

Objectives : Determination of reaction order (n) and rate constants (k) of the CaCO<sub>3</sub> scale formation reaction that was accelerated by the HVI (high voltage impulse) induction.Methods : HVI was inducted to the synthetic solution containing 2.5 mM of Ca<sup>2+</sup> ion at different temperatures of 25, 40, 60℃. The concentration of Ca<sup>2+</sup> ion has been monitored as voltages of the HVI increased from 0 to 5, 10, 15 kV. Reaction order and the rate constants of the CaCO<sub>3</sub> formation reaction were determined with the experimental dataset of Ca<sup>2+</sup> concentration vs. time plots.Results and Discussion : The CaCO<sub>3</sub> formation was determined to follow two-molecules 2<sup>nd</sup> order reaction. The reaction rate constant, k increased as temperature and the applied voltages of HVI increased. The rate constant, k at 25℃ and 15 kV of HVI was 8.2×10<sup>-3</sup> L/(mmol･hr), which was 2.7 times greater than the k of the control at 25℃, 3.0×10<sup>-3</sup> L/(mmol･hr).Conclusions : The reaction of CaCO<sub>3</sub> formation was accelerated by HVI as the applied voltages of HVI increased, indicating that the HVI could be used as an alternative desalting technology for scale control.

Weak Beam Imaging and Diffraction Studies of Stacking Faults in Silicon

1976 ◽  
Vol 34 ◽  
pp. 590-591
Author(s):  
T. Y. Tan ◽  
W. K. Tice
Keyword(s):  
Fast Neutron ◽  
Rapid Determination ◽  
Stacking Faults ◽  
Imaging Method ◽  
Large Reduction ◽  
Dislocation Loops ◽  
Fringe Spacing ◽  
Weak Beam ◽  
Kinematical Theory

In studying ion implanted semiconductors and fast neutron irradiated metals, the need for characterizing small dislocation loops having diameters of a few hundred angstrom units usually arises. The weak beam imaging method is a powerful technique for analyzing these loops. Because of the large reduction in stacking fault (SF) fringe spacing at large sg, this method allows for a rapid determination of whether the loop is faulted, and, hence, whether it is a perfect or a Frank partial loop. This method was first used by Bicknell to image small faulted loops in boron implanted silicon. He explained the fringe spacing by kinematical theory, i.e., ≃l/(Sg) in the fault fringe in depth oscillation. The fault image contrast formation mechanism is, however, really more complicated.

Methods for rapid determination of pecan (Carya illinoensis) seed viability

2017 ◽  
Vol 45 (2) ◽  
pp. 455-464
Author(s):  
T.T. Xue ◽  
J. Liu ◽  
Y.B. Shen ◽  
G.Q. Liu
Keyword(s):  
Rapid Determination ◽  
Seed Viability ◽  
Carya Illinoensis
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