Measurements of fiber bundle interfacial properties of three-dimensionally reinforced carbon/carbon composites up to 2273K

Carbon ◽  
2007 ◽  
Vol 45 (2) ◽  
pp. 459-467 ◽  
Author(s):  
Takuya Aoki ◽  
Yuhsuke Yamane ◽  
Toshio Ogasawara ◽  
Takeshi Ogawa ◽  
Sunao Sugimoto ◽  
...  
2011 ◽  
Vol 52-54 ◽  
pp. 2065-2070 ◽  
Author(s):  
Li Ming Wei ◽  
Song He Meng ◽  
Cheng Hai Xu

Most of fracture processes of carbon/carbon composites (C/Cs) have been found to profoundly affected by their interfacial properties. A fiber-bundle pull-out test is utilized to determine the interface strength between fiber bundles and matrix of two kinds of C/Cs. Pre-fracture observations revealed that amount of voids and gaps existed in the interface, which make the interface strength decreases. The interfacial shear strengths of two kinds of C/Cs were all very low. Post-fracture observations revealed that a shear fracture was successfully induced within the carbon matrices at the loaded fiber bundle interface.


2011 ◽  
Vol 26 (12) ◽  
pp. 1309-1313 ◽  
Author(s):  
Jie-Hui JING ◽  
Yu-Dong HUANG ◽  
Li LIU ◽  
Zai-Xing JIANG ◽  
Bo JIANG

2011 ◽  
Vol 183-185 ◽  
pp. 2168-2172
Author(s):  
Jie Hui Jing ◽  
Yu Dong Huang ◽  
Li Liu ◽  
Zai Xing Jiang ◽  
Bo Jiang

The bundle/matrix interfacial strength in carbon/carbon composites was evaluated via the fiber-bundle pushed-out method. The determined data having a certain difference resulted from different interface fracture behavior via the analyses of the load-displacement curves of the loaded bundles and the observations of SEM images of the pushed-out bundle surface and its bundle/matrix interface. In order to better research bundle/matrix interface properties, Micro-CT was adopted to analyze bundle/matrix interface structure in c/c composites with nondestructive method, and its 2D and 3D images of real interfacial structure were obtained. Thus, the bundle pushed-out method, SEM and Micro-CT are better analysis and characterization methods of interfacial properties at bundle/matrix interface.


Carbon ◽  
2012 ◽  
Vol 50 (8) ◽  
pp. 2717-2725 ◽  
Author(s):  
Rajneesh Sharma ◽  
Puneet Mahajan ◽  
Ramesh Kumar Mittal

2005 ◽  
Vol 25 (4) ◽  
pp. 535-542 ◽  
Author(s):  
Hiroshi Hatta ◽  
Ken Goto ◽  
Shinya Ikegaki ◽  
Itaru Kawahara ◽  
Mohamed S. Aly-Hassan ◽  
...  

Author(s):  
M. E. Twigg ◽  
B. R. Bennett ◽  
J. R. Waterman ◽  
J. L. Davis ◽  
B. V. Shanabrook ◽  
...  

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.


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