Influence of Ag thickness on the structural, optical, and electrical properties of the SnS/Ag/SnS trilayer films for solar cell application

2020 ◽  
Vol 20 (3) ◽  
pp. 438-444
Author(s):  
Vinaya Kumar Arepalli ◽  
Tien Dai Nguyen ◽  
Jeha Kim
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Solar Cell Application

Role of Thickness towards the Optical and Electrical Properties of Photoactive Layer MEH-PPV: TiO2 Nanocomposite Thin Films

2013 ◽  
Vol 832 ◽  
pp. 404-409 ◽  
Author(s):  
Fazlinashatul Suhaidah Zahid ◽  
Puteri Sarah Mohamad Saad ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Organic Solar Cells ◽  
Visible Region ◽  
Optical And Electrical Properties ◽  
Solar Cell Application ◽  
Photoactive Layer ◽  
Nanocomposite Thin Films

In recent years, the research on organic solar cells systems based on nanocomposite containing conjugated polymers has lead to great attention with the aim or replacing conventional inorganic solar cells. This nanocomposite can be processed at lower cost, low weight and ease of synthesis with greater versatility than todays solar cell. In this study, we investigated the dependence of physical, optical and electrical properties on the thickness of MEH-PPV: TiO2 nanocomposite thin films for organic solar cell application. It was found the optical properties of photo-active layer MEH-PPV: TiO2 nanocomposite thin films improved with increasing its thickness however the electrical properties decreased. The absorption coefficients of photoactive layer are high in the visible region (400-600 nm) with optimum absorption region at 500 nm. The shift of absorption edge toward longer wavelength with increased of nanocomposite photoactive layer thickness due to narrowing band gap caused by the effects of electron-electron and electron-impurity scattering. In addition the study of illuminated current-voltage (I-V) characteristics revealed the increment of recombination process with increased of photoactive layer thicknesses. It was found such increased in resistivity from 136x103 to 1600x103 Ω.cm is closely related to the electric field and exciton dissociation which is decreased with increased photoactive thickness.

Opto- electrical properties of p-SnSe:S/N-Si heterojunction for solar cell application

2020 ◽  
Author(s):  
Ghuzlan Sarhan Ahmed ◽  
Bushra K. H. Al-Maiyaly ◽  
Bushra H. Hussein ◽  
Hanan K. Hassun
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Solar Cell Application

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Al-DOPED ZnO TRANSPARENT CONDUCTING OXIDE FOR SOLAR CELL APPLICATIONS

2011 ◽  
Vol 04 (04) ◽  
pp. 401-405 ◽  
Author(s):  
W. CHER ◽  
S. YICK ◽  
S. XU ◽  
Z. J. HAN ◽  
K. OSTRIKOV
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Transparent Conducting Oxide ◽  
Optical Transmittance ◽  
Nitrogen Atmosphere ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Optimal Annealing Temperature ◽  
Post Synthesis

Al -doped zinc oxide (AZO) thin films are deposited onto glass substrates using radio-frequency reactive magnetron sputtering and the improvements in their physical properties by post-synthesis thermal treatment are reported. X-ray diffraction spectra show that the structure of films can be controlled by adjusting the annealing temperatures, with the best crystallinity obtained at 400°C under a nitrogen atmosphere. These films exhibit improved quality and better optical transmittance as indicated by the UV-Vis spectra. Furthermore, the sheet resistivity is found to decrease from 1.87 × 10-3 to 5.63 × 10-4Ω⋅cm and the carrier mobility increases from 6.47 to 13.43 cm2 ⋅ V-1 ⋅ s-1 at the optimal annealing temperature. Our results demonstrate a simple yet effective way in controlling the structural, optical and electrical properties of AZO thin films, which is important for solar cell applications.

scholarly journals Influence of bulk defects in SnS absorber layer on optical and electrical properties of solar cell

2021 ◽  
Vol 2114 (1) ◽  
pp. 012044
Author(s):  
Mussab J. Ahmed ◽  
Ayed N. Saleh
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Defect Density ◽  
Absorber Layer ◽  
Simulation Program ◽  
Optical And Electrical Properties ◽  
Absorption Layer ◽  
Low Concentrations ◽  
Concentration Of Impurities

Abstract In this research, the effect of bulk defect on the performance of the solar cell was studied by using the AFORS-HET simulation program. This was done by varying the density of defects including both Acceptor-like and donor-like within the SnS absorption layer. The thickness of the SnS layer was changed from 600nm to 9000nm with the change in bulk defect density in the same layer from (1E10 to 1E17 cm−3). The results showed that when the density of defects is less than 1E14cm−3, it has no effect on the performance of the solar cell, but its effect appears after this concentration, On the contrary, it is the effect of thickness, the results showed that the change in thickness at the defect density of E16cm−3 does not affect on the optical and electrical properties. Also, the results showed that the effect of defects is greatest at low concentrations of Na impurities, and this effect begins to decrease with increasing the concentration of impurities.

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