Efficiency characteristics of a silicon oxide passivation layer on p-type crystalline silicon solar cell at low illumination

2019 ◽  
Vol 19 (6) ◽  
pp. 683-689 ◽  
Author(s):  
Jong Hoon Lee ◽  
Kwan Hong Min ◽  
Min Gu Kang ◽  
Kyung Taek Jeong ◽  
Jeong In Lee ◽  
...  
2019 ◽  
Vol 58 (5) ◽  
pp. 050915 ◽  
Author(s):  
Mickaël Lozac’h ◽  
Shota Nunomura ◽  
Hiroshi Umishio ◽  
Takuya Matsui ◽  
Koji Matsubara

2012 ◽  
Vol 30 (1-2) ◽  
pp. 41-45 ◽  
Author(s):  
Jinkuk Kim ◽  
Jejun Park ◽  
Ji Hwa Hong ◽  
Sung Jin Choi ◽  
Gi Hwan Kang ◽  
...  

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.


1993 ◽  
Vol 32 (Part 2, No. 6A) ◽  
pp. L770-L773 ◽  
Author(s):  
Kenichi Ishii ◽  
Hideshi Nishikawa ◽  
Tetsuo Takahashi ◽  
Yutaka Hayashi

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