Spin-orbit torque from spin-flipping scattering at ferromagnetic metal/topological insulator interface

2019 ◽  
Vol 19 (3) ◽  
pp. 241-245 ◽  
Author(s):  
Seungju Shin ◽  
Hyun-Woo Lee
Keyword(s):  
Topological Insulator ◽  
Ferromagnetic Metal ◽  
Spin Orbit ◽  
Insulator Interface

scholarly journals Inverse spin Hall effect in ferromagnetic metal with Rashba spin orbit coupling

AIP Advances ◽  
2012 ◽  
Vol 2 (3) ◽  
pp. 032147 ◽  
Author(s):  
M.-J. Xing ◽  
M. B. A. Jalil ◽  
Seng Ghee Tan ◽  
Y. Jiang
Keyword(s):  
Hall Effect ◽  
Ferromagnetic Metal ◽  
Spin Hall Effect ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin ◽  
Inverse Spin Hall Effect

Spin-orbit torques in ultrathin ferromagnetic metal layers

2010 ◽  
Author(s):  
Ioan M. Miron ◽  
Gilles Gaudin ◽  
Stéphane Auffret ◽  
Bernard Rodmacq ◽  
Alain Schuhl ◽  
...  
Keyword(s):  
Ferromagnetic Metal ◽  
Spin Orbit ◽  
Metal Layers

Charge-magnon conversion at the topological insulator/antiferromagnetic insulator interface

2020 ◽  
Vol 102 (11) ◽  
Author(s):  
L. Y. Liao ◽  
Z. Y. Zhou ◽  
Y. J. Zhou ◽  
W. X. Zhu ◽  
F. Pan ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Insulator Interface

scholarly journals Design rules for scalability in spin-orbit electronics

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Mohammad Kazemi ◽  
Mark F. Bocko
Keyword(s):  
Heavy Metal ◽  
Power Consumption ◽  
Low Power ◽  
Topological Insulator ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Thermal Fluctuations ◽  
Low Power Consumption ◽  
Spin Orbit ◽  
Design Rules

Abstract Spin-orbit electronics (spin-orbitronics) has been widely discussed for enabling nonvolatile devices that store and process information with low power consumption. The potential of spin-orbitronics for memory and logic applications has been demonstrated by perpendicular anisotropy magnetic devices comprised of heavy-metal/ferromagnet or topological-insulator/ferromagnet bilayers, where the heavy metal or topological insulator provides an efficient source of spin current for manipulating information encoded in the bistable magnetization state of the ferromagnet. However, to reliably switch at room temperature, spin-orbit devices should be large to reduce thermal fluctuations, thereby compromising scalability, which in turn drastically increases power dissipation and degrades performance. Here, we show that the scalability is not a fundamental limitation in spin-orbitronics, and by investigating the interactions between the geometry of the ferromagnetic layer and components of the spin-orbit torque, we derive design rules that lead to deeply scalable spin-orbit devices. Furthermore, employing experimentally verified models, we propose deeply scaled spin-orbit devices exhibiting high-speed deterministic switching at room temperature. The proposed design principles are essential for design and implementation of very-large-scale-integration (VLSI) systems that provide high performance operation with low power consumption.

scholarly journals Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Nguyen Huynh Duy Khang ◽  
Soichiro Nakano ◽  
Takanori Shirokura ◽  
Yasuyoshi Miyamoto ◽  
Pham Nam Hai
Keyword(s):  
Topological Insulator ◽  
Spin Orbit ◽  
Magnetization Switching ◽  
Si Substrates ◽  
Ultralow Power
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