Time-resolved photoluminescence of Cu(In,Ga)(Se,S) 2 thin films and temperature dependent current density-voltage characteristics of their solar cells on surface treatment effect

2017 ◽  
Vol 17 (4) ◽  
pp. 461-466 ◽  
Author(s):  
Jakapan Chantana ◽  
Takuya Kato ◽  
Hiroki Sugimoto ◽  
Takashi Minemoto
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Surface Treatment ◽  
Current Density ◽  
Treatment Effect ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

scholarly journals The thermal stability of FAPbBr3 nanocrystals from temperature-dependent photoluminescence and first-principles calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44373-44381
Author(s):  
Xiaozhe Wang ◽  
Qi Wang ◽  
Zhijun Chai ◽  
Wenzhi Wu
Keyword(s):  
First Principles ◽  
First Principle ◽  
First Principles Calculations ◽  
Temperature Dependent ◽  
Time Resolved ◽  
First Principle Calculations ◽  
Steady State Time ◽  
Time Resolved Photoluminescence ◽  
Thermal Stability Of ◽  
Temperature Dependent Photoluminescence

The thermal properties of FAPbBr3 perovskite nanocrystals (PNCs) is investigated by use of temperature-dependent steady-state/time-resolved photoluminescence and first-principle calculations.

scholarly journals Defects characterization in thin films photovoltaics materials by correlated high-frequency modulated and time resolved photoluminescence: An application to Cu(In,Ga)Se2

2019 ◽  
Vol 669 ◽  
pp. 520-524
Author(s):  
Baptiste Bérenguier ◽  
Nicolas Barreau ◽  
Alexandre Jaffre ◽  
Daniel Ory ◽  
Jean-François Guillemoles ◽  
...  
Keyword(s):  
Thin Films ◽  
High Frequency ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Distinguishing bulk and surface recombination in CdTe thin films and solar cells using time-resolved terahertz and photoluminescence spectroscopies

2021 ◽  
Vol 130 (16) ◽  
pp. 163104
Author(s):  
Mohammad M. Taheri ◽  
Triet M. Truong ◽  
Siming Li ◽  
William N. Shafarman ◽  
Brian E. McCandless ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Surface Recombination ◽  
Time Resolved ◽  
Cdte Thin Films

scholarly journals Characterization of thin CdTe solar cells with a CdSeTe front layer

MRS Advances ◽  
2019 ◽  
Vol 4 (37) ◽  
pp. 2053-2062
Author(s):  
Alexandra M. Bothwell ◽  
Jennifer A. Drayton ◽  
Pascal M. Jundt ◽  
James R. Sites
Keyword(s):  
Current Density ◽  
Fill Factor ◽  
Alloy Layer ◽  
Time Resolved ◽  
Loss Analysis ◽  
Cdte Solar Cells ◽  
Close Space Sublimation ◽  
Device Structures ◽  
Electroluminescence Intensity ◽  
Time Resolved Photoluminescence

ABSTRACTThin CdTe photovoltaic device efficiencies show significant improvement with the incorporation of a CdSeTe alloy layer deposited between a MgZnO emitter and CdTe absorber. CdTe and CdSeTe/CdTe devices fabricated by close-space sublimation with a total absorber thickness of 1.5 µm are studied using microscopy measurements and show minimal diffusion of Se into the CdTe. Current loss analysis shows that the CdSeTe layer is the primary absorber in the CdSeTe/CdTe structure, and fill factor loss analysis shows that ideality-factor reduction is the dominant mechanism of fill factor loss. Improvement in the CdSeTe/CdTe absorber quality compared to CdTe is also reflected in spectral and time-resolved photoluminescence measurements. Current density vs. voltage measurements show an increase in current density of up to 2 mA/cm2 with the addition of CdSeTe due to a band gap shift from 1.5 to 1.42 eV for CdTe and CdSeTe/CdTe absorbers respectively. Voltage deficit is lower with the incorporation of the CdSeTe layer, corroborated by improved electroluminescence intensity. The addition of CdSeTe into CdTe device structures has increased device efficiencies from 14.7% to 15.6% for absorbers with a total thickness less than two microns.

Enhanced recombination next to laser-patterned lines in CIGSe solar cells revealed by spectral and time-resolved photoluminescence

2021 ◽  
Vol 536 ◽  
pp. 147721
Author(s):  
Christof Schultz ◽  
Andreas Bartelt ◽  
Cornelia Junghans ◽  
Wolfgang Becker ◽  
Rutger Schlatmann ◽  
...  
Keyword(s):  
Solar Cells ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Instrumentation for Reliably Determining Porous Silicon Photoluminescence Responses to Gaseous Analyte Vapors

2016 ◽  
Vol 70 (12) ◽  
pp. 1974-1980 ◽  
Author(s):  
Justin M. Reynard ◽  
Nathan S. Van Gorder ◽  
Caley A. Richardson ◽  
Richie D. Eriacho ◽  
Frank V. Bright
Keyword(s):  
Porous Silicon ◽  
Vapor Concentration ◽  
Photoluminescence Intensity ◽  
Spectral Measurements ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Hyper Spectral ◽  
New Instrumentation ◽  
Time Resolved Photoluminescence ◽  
New System

We report new instrumentation for rapidly and reliably measuring the temperature-dependent photoluminescence response from porous silicon as a function of analyte vapor concentration. The new system maintains the porous silicon under inert conditions and it allows on-the-fly steady-state and time-resolved photoluminescence intensity and hyper-spectral measurements between 293 K and 450 K. The new system yields reliable data at least 100-fold faster in comparison to previous instrument platforms.

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