Characteristics of Germanium n+/p junctions formed by phosphorus diffusion from on indium-gallium-phosphide layer

2015 ◽  
Vol 15 (7) ◽  
pp. 765-769 ◽  
Author(s):  
Jung Woo Baek ◽  
Jaewoo Shim ◽  
Jin-Hong Park
Keyword(s):  
Gallium Phosphide ◽  
Indium Gallium Phosphide ◽  
Phosphorus Diffusion ◽  
Indium Gallium

scholarly journals Correction to Solution Phase Synthesis of Indium Gallium Phosphide Alloy Nanowires

ACS Nano ◽  
2015 ◽  
Vol 9 (6) ◽  
pp. 6636-6636
Author(s):  
Nikolay Kornienko ◽  
Desiré D. Whitmore ◽  
Yi Yu ◽  
Stephen R. Leone ◽  
Peidong Yang
Keyword(s):  
Gallium Phosphide ◽  
Indium Gallium Phosphide ◽  
Solution Phase ◽  
Phase Synthesis ◽  
Solution Phase Synthesis ◽  
Alloy Nanowires ◽  
Indium Gallium

Near-field Scanning Optical Microscopy and Electron Microprobe Microscopy Investigations of Immiscibility Effects in Indium Gallium Phosphide Grown by Liquid Phase Epitaxy

2001 ◽  
Vol 667 ◽  
Author(s):  
C. A. Paulson ◽  
A. B. Ellis ◽  
T. F. Kuech
Keyword(s):  
Optical Properties ◽  
Liquid Phase ◽  
Optical Microscopy ◽  
Liquid Phase Epitaxy ◽  
Gallium Phosphide ◽  
Near Field ◽  
Indium Gallium Phosphide ◽  
Indium Gallium ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

ABSTRACTWe have used Near-field Scanning Optical Microscopy (NSOM) and Electron Probe Microanalysis (EPMA) to study the topographic and microscopic optical properties of indium gallium phosphide (In1−xGaxP) samples grown by Liquid Phase Epitaxy (LPE) on gallium arsenide substrates. Photoluminescence (PL) intensity images gathered using NSOM exhibit strong, highly localized variations in the optical properties of these samples that are seen to occur roughly in registry with the surface topography. Shifts in the PL peak position (by 27 meV) occur across highly mismatched samples with high In content, whereas no shifts were seen for In1−xGaxP films with a nearly lattice matched composition. Compositional fluctuations lead to these PL peak energy shifts, measured by NSOM with a resolution of 250 nm. These composition fluctuations arise from the known solid-solid miscibility gap in the In1−xGaxP system at temperatures used for the growth of these samples.

scholarly journals Efficient type II second harmonic generation in an indium gallium phosphide on insulator wire waveguide aligned with a crystallographic axis

2021 ◽  
Vol 46 (6) ◽  
pp. 1490
Author(s):  
Nicolas Poulvellarie ◽  
Carlos Mas Arabi ◽  
Charles Ciret ◽  
Sylvain Combrié ◽  
Alfredo De Rossi ◽  
...  
Keyword(s):  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Gallium Phosphide ◽  
Second Harmonic ◽  
Indium Gallium Phosphide ◽  
Crystallographic Axis ◽  
Type Ii ◽  
Efficient Type ◽  
Indium Gallium

Second Harmonic Generation Induced by Longitudinal Components in Indium Gallium Phosphide Nanowaveguides

2019 ◽  
Author(s):  
Nicolas Poulvellarie ◽  
Utsav Dave ◽  
Koen Alexander ◽  
Charles Ciret ◽  
Fabrice Raineri ◽  
...  
Keyword(s):  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Gallium Phosphide ◽  
Second Harmonic ◽  
Indium Gallium Phosphide ◽  
Indium Gallium

scholarly journals Solution Phase Synthesis of Indium Gallium Phosphide Alloy Nanowires

ACS Nano ◽  
2015 ◽  
Vol 9 (4) ◽  
pp. 3951-3960 ◽  
Author(s):  
Nikolay Kornienko ◽  
Desiré D. Whitmore ◽  
Yi Yu ◽  
Stephen R. Leone ◽  
Peidong Yang
Keyword(s):  
Gallium Phosphide ◽  
Indium Gallium Phosphide ◽  
Solution Phase ◽  
Phase Synthesis ◽  
Solution Phase Synthesis ◽  
Alloy Nanowires ◽  
Indium Gallium
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