Recombination zone shift in phosphorescent white organic light-emitting devices with single host structure of multi-emission layers

2014 ◽  
Vol 14 (9) ◽  
pp. 1188-1191 ◽  
Author(s):  
Yu-Seok Seo ◽  
Dae-Gyu Moon
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Single Host ◽  
Host Structure ◽  
Organic Light Emitting Devices ◽  
Recombination Zone

scholarly journals Recombination zone in mixed-host organic light-emitting devices

2006 ◽  
Vol 89 (16) ◽  
pp. 163511 ◽  
Author(s):  
Chih-Hung Hsiao ◽  
Yan-Hau Chen ◽  
Tien-Chun Lin ◽  
Chia-Chiang Hsiao ◽  
Jiun-Haw Lee
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Organic Light Emitting Devices ◽  
Recombination Zone

scholarly journals Realization of Efficient Phosphorescent Organic Light-Emitting Devices Using Exciplex-Type Co-Host

Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 51
Author(s):  
Lishuang Wu ◽  
Huiwen Xu ◽  
Huishan Yang
Keyword(s):  
High Performance ◽  
Delayed Fluorescence ◽  
Thermally Activated Delayed Fluorescence ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Thermally Activated ◽  
Organic Light ◽  
Sufficient Energy ◽  
Single Host ◽  
Organic Light Emitting Devices

High-performance phosphorescent organic light-emitting devices with an exciplex-type co-host were fabricated. The co-host is constituted by 1,3,5-tris(N-phenylbenzimidazol-2-yl) benzene, and 4,4,4-tris (N-carbazolyl) triphenylamine, and has obvious virtues in constructing efficient devices because of the thermally activated delayed fluorescence (TADF) resulting from a reverse intersystem crossing (RISC) process. The highest external quantum efficiency and luminance are 14.60% and 100,900 cd/m2 for the optimal co-host device. For comparison, 9.22% and 25,450 cd/m2 are obtained for a device employing 4,4,4-tris (N-carbazolyl) triphenylamine as a single-host. Moreover, the efficiency roll-off is notably alleviated for the co-host device, indicated by much higher critical current density of 327.8 mA/cm2, compared to 120.8 mA/cm2 for the single-host device. The alleviation of excitons quenching resulting from the captured holes and electrons, together with highly sufficient energy transfer between the co-host and phosphorescent dopant account for the obvious boost in device performances.

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