Effect of Nb doping on morphology, crystal structure, optical band gap energy of TiO2 thin films

2014 ◽  
Vol 14 (3) ◽  
pp. 421-427 ◽  
Author(s):  
Deuk Yong Lee ◽  
Ju-Hyun Park ◽  
Young-Hun Kim ◽  
Myung-Hyun Lee ◽  
Nam-Ihn Cho
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Gap Energy ◽  
Nb Doping

Effect of Er doping on optical band gap energy of TiO2 thin films prepared by spin coating

2013 ◽  
Vol 13 (7) ◽  
pp. 1301-1305 ◽  
Author(s):  
Deuk Yong Lee ◽  
Jin-Tae Kim ◽  
Ju-Hyun Park ◽  
Young-Hun Kim ◽  
In-Kyu Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spin Coating ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Gap Energy ◽  
Er Doping

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

scholarly journals Effect of thickness on the optical properties of Gaas thin films

2013 ◽  
Vol 37 (1) ◽  
pp. 83-91 ◽  
Author(s):  
Chitra Das ◽  
Jahanara Begum ◽  
Tahmina Begum ◽  
Shamima Choudhury
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Band Gap ◽  
Optical Band Gap ◽  
Visible Region ◽  
Solar Spectrum ◽  
Band Gap Energy ◽  
Optical Parameters ◽  
Gap Energy

Effect of thickness on the optical and electrical properties of gallium arsenide (GaAs) thin films were studied. The films of different thicknesses were prepared by vacuum evaporation method (~10-4 Pa) on glass substrates at a substrate temperature of 323 K. The film thickness was measured in situ by a frequency shift of quartz crystal. The thicknesses were 250, 300 and 500 nm. Absorption spectrum of this thin film had been recorded using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300 - 2500 nm. The values of some important optical parameters of the studied films (absorption coefficient, optical band gap energy and refractive index; extinction co-efficient and real and imaginary parts of dielectric constant) were determined using these spectra. Transmittance peak was observed in the visible region of the solar spectrum. Here transmittance showed better result when thicknesses were being increased. The optical band gap energy was decreased by the increase of thickness. The refractive index increased by increasing thickness while extinction co-efficient and real and imaginary part of dielectric constant decreased. DOI: http://dx.doi.org/10.3329/jbas.v37i1.15684 Journal of Bangladesh Academy of Sciences, Vol. 37, No. 1, 83-91, 2013

Effects of Nitrogen Doping on Optical Properties of Tungsten Oxide Thin Films

2012 ◽  
Vol 616-618 ◽  
pp. 1773-1777
Author(s):  
Xi Lian Sun ◽  
Hong Tao Cao
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Tungsten Oxide ◽  
Nitrogen Doping ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Tungsten Oxide Thin Films

In depositing nitrogen doped tungsten oxide thin films by using reactive dc pulsed magnetron sputtering process, nitrous oxide gas (N2O) was employed instead of nitrogen (N2) as the nitrogen dopant source. The nitrogen doping effect on the structural and optical properties of WO3 thin films was investigated by X-ray diffraction, transmission electron microscopy and UV-Vis spectroscopy. The thickness, refractive index and optical band gap energy of these films have been determined by analyzing the SE spectra using parameterized dispersion model. Morphological images reveal that the films are characterized by a hybrid structure comprising nanoparticles embeded in amorphous matrix and open channels between the agglomerated nanoparticles. Increasing nitrogen doping concentration is found to decrease the optical band gap energy and the refractive index. The reduced band gaps are associated with the N 2p orbital in the N-doped tungsten oxide films.

Effect of 2,4-dinitrophenol dye doping on tristhioureazinc(II) sulfate single crystals: a potential nonlinear optical material

2020 ◽  
Vol 53 (4) ◽  
pp. 972-981 ◽  
Author(s):  
G. Durgababu ◽  
G. J. Nagaraju ◽  
G. Bhagavannarayana
Keyword(s):  
Crystal Structure ◽  
Band Gap ◽  
Single Crystals ◽  
Nonlinear Optical ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Optical Range ◽  
Gap Energy ◽  
Uv Visible ◽  
Crystalline Matrix

Good quality single crystals of 2,4-dinitrophenol (DNP)-doped tristhioureazinc(II) sulfate (ZTS) were successfully grown by employing the simple and cost effective slow-evaporation solution technique. To study the effect of doping on various device properties, the grown single crystals were subjected to powder X-ray diffraction (PXRD), high-resolution XRD, thermogravimetric analysis (TGA), Vickers hardness testing, and UV–visible, photoluminescence (PL) and Fourier transform IR (FTIR) spectroscopy techniques. The crystal structure of DNP-doped ZTS bulk single crystals remained the same as the crystal structure of ZTS. However, the changes in intensities of the diffraction peaks in the PXRD spectra indicated the incorporation of dopants into the crystalline matrix. FTIR studies confirm the incorporation of dopants into the crystalline matrix, shown by the shifting of certain prominent absorption bands towards higher energy. This also indicated the induced useful strain due to doping, leading to charge transfer and the enhancement of nonlinear optical properties. The cut-off wavelength and optical band gap energy of pure ZTS and DNP-doped ZTS crystals were studied by UV–visible absorption spectroscopy, revealing a slight reduction in the optical band gap energy due to doping, which in turn revealed the enhancement of the optical range. PL studies revealed an enhanced optical range of photoluminescence in ZTS crystals. Second harmonic generation (SGH) studies carried out by the Kurtz powder technique revealed the enhancement of SHG value due to DNP doping. To ensure the thermal stability and mechanical strength of the grown crystals with doping (required from the point of view of device applications), TGA and Vicker's hardness studies were performed.

Effect of Microstructure of TiO 2 Thin Films on Optical Band Gap Energy

2005 ◽  
Vol 22 (7) ◽  
pp. 1787-1789 ◽  
Author(s):  
Tian Guang-Lei ◽  
He Hong-Bo ◽  
Shao Jian-Da
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Effect Of Microstructure
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