In-situ monitoring and control of hydrogenated amorphous silicon–germanium band-gap profiling during plasma deposition process

2013 ◽  
Vol 13 (7) ◽  
pp. 1502-1505 ◽  
Author(s):  
Se Youn Moon ◽  
D.J. You ◽  
S.E. Lee ◽  
Heonmin Lee
Keyword(s):  
Silicon Germanium ◽  
Plasma Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Deposition Process ◽  
In Situ Monitoring ◽  
Monitoring And Control ◽  
And Control ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

In-Situ Monitoring of Surface Hydrogen on the a-SiGe:H Films

1997 ◽  
Vol 467 ◽  
Author(s):  
Y. Toyoshima ◽  
G. Ganguly ◽  
T. Ikeda ◽  
K. Saitoh ◽  
M. Kondo ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Reaction Scheme ◽  
In Situ Monitoring ◽  
Alloy Films ◽  
Surface Hydrogen ◽  
Infrared Reflection ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

ABSTRACTThe bonded hydrogen on the growing surface of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy films has been investigated by use of infrared reflection absorption spectroscopy (IR-RAS). When the alloy films are Si-rich, the surface hydrogen bonded to Si atoms is found to behave in a similar way to those on the hydrogenated amorphous silicon (a-Si:H) films. This means that the thermal desorption stability of surface Si hydride species is not significantly affected by the coexistence of a small amount (typically 20 at.%) of Ge. On the contrary, the desorption behavior of surface hydrogen depends on the alloy composition when the a-SiGe:H films are Ge-rich. A surface reaction scheme is provided in an attempt to explain this series of behavior in surface hydrogen on the a-SiGe:H films.

Properties of Catalytic-Cvd Amorphous Silicon-Germanium (a-SiGe:H)

1990 ◽  
Vol 192 ◽  
Author(s):  
Hideki Matsumura ◽  
Masaaki Yamaguchi ◽  
Kazuo Morigaki
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Characteristic Energy ◽  
Optical Band Gaps ◽  
Spin Resonance ◽  
Amorphous Silicon Germanium ◽  
Conductive Properties ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-germanium (a-SiGe:H) films are prepared by the catalytic chemical vapor deposition (Cat-CVD) method using a SiH4, GeH4 and H4 gas mixture. Properties of the films are investigated by the photo-thermal deflection spectroscopy (PDS) and electron spin resonance (ESR) measurements, in addition to the photo-conductive and structural studies. It is found that the characteristic energy of Urbach tail, ESR spin density and other photo-conductive properties of Cat-CVD a-SiGe:H films with optical band gaps around 1.45 eV are almost equivalent to those of the device quality glow discharge hydrogenated amorphous silicon (a-Si:H).

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