Forming process of unipolar resistance switching in Ta2O5−x thin films

2013 ◽  
Vol 13 (7) ◽  
pp. 1172-1174 ◽  
Author(s):  
Shin Buhm Lee ◽  
Hyang Keun Yoo ◽  
Bo Soo Kang
Keyword(s):  
Thin Films ◽  
Resistance Switching ◽  
Forming Process

Dielectric-breakdown-like forming process in the unipolar resistance switching of Ta2O5−x thin films

2012 ◽  
Vol 12 (3) ◽  
pp. 846-848 ◽  
Author(s):  
Moon Jee Yoon ◽  
Shin Buhm Lee ◽  
Hyang Keun Yoo ◽  
Soobin Sinn ◽  
Bo Soo Kang
Keyword(s):  
Thin Films ◽  
Dielectric Breakdown ◽  
Resistance Switching ◽  
Forming Process

Investigation of Resistance Switching Properties in Undoped and Indium Doped SrTiO3 Thin Films Prepared by Pulsed Laser Deposition

2009 ◽  
Vol 1160 ◽  
Author(s):  
Xiaomin Li
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Resistance Switching ◽  
Laser Deposition ◽  
Differential Conductance ◽  
Reverse Direction ◽  
Forming Process ◽  
Electrical Field ◽  
Si Substrates

AbstractIn this paper, the undoped SrTiO3 (STO) and Indium doped STO (SrTi1-xInxO3: STIO) thin films were grown on Pt/Ti/SiO2/Si substrates by pulsed laser deposition with low substrate temperature. For undoped STO film, the influences of the forming processes on their resistive switching properties were studied by current and voltage controlled I-V sweeps, respectively. An obvious current controlled negative differential conductance phenomenon was found in both polarities of the electrical field. However, for low Indium doped STIO (x=0.1), the filament related resistance switching was observed in both the current and voltage I-V sweeps. And for high Indium doped STIO (x=0.2), a resistance switching with a reverse direction change to that in undoped STO can be obtained by a proper forming process. Based on these results, the reversible change of the Schottky like barrier at the grain boundary by the migration of oxygen vacancies were proposed to interpret the mechanism of the resistance switching.

Fabrication and Resistance-Switching Behaviors of NiO Thin Films by Thermal Oxidation of Evaporated Ni Films

2009 ◽  
Vol 66 ◽  
pp. 131-134
Author(s):  
X. Cao ◽  
Xiao Min Li ◽  
Wei Dong Yu ◽  
Rui Yang ◽  
Xin Jun Liu
Keyword(s):  
Thin Films ◽  
Thermal Oxidation ◽  
Resistive Switching ◽  
Resistance Switching ◽  
Si Substrates ◽  
Current Compliance

Polycrystalline NiO thin films were fabricated on Pt (111)/Ti/SiO2/Si substrates by thermal oxidation of the evaporated Ni films. Pt/NiO/Pt structures were prepared, and they showed reversible resistance switching behaviors. When the compliance set current was varied from 5 mA to 40 mA, the on-state currents increased, while the on-state resistances decreased. It is probably attributed to higher current compliance resulted in the formation of stronger and less resistive filaments, which in turn need more energy and power for their rupture. The resistive switching in NiO thin films is closely related to the formation and rupture of conducting filaments.

Resistance switching in perovskite thin films

2006 ◽  
Vol 243 (9) ◽  
pp. 2089-2097 ◽  
Author(s):  
A. Ignatiev ◽  
N. J. Wu ◽  
X. Chen ◽  
S. Q. Liu ◽  
C. Papagianni ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistance Switching

In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO2 and V2O3 thin films

2015 ◽  
Vol 3 (43) ◽  
pp. 11357-11365 ◽  
Author(s):  
Geert Rampelberg ◽  
Bob De Schutter ◽  
Wouter Devulder ◽  
Koen Martens ◽  
Iuliana Radu ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffraction Study ◽  
Resistance Switching ◽  
X Ray Diffraction ◽  
X Ray

VO2 and V2O3 thin films were prepared during in situ XRD investigation by oxidation and reduction of V and V2O5. Films show up to 5 orders of magnitude resistance switching.

Resistance switching in polycrystalline BiFeO3 thin films

2010 ◽  
Vol 97 (4) ◽  
pp. 042101 ◽  
Author(s):  
Kuibo Yin ◽  
Mi Li ◽  
Yiwei Liu ◽  
Congli He ◽  
Fei Zhuge ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistance Switching ◽  
Bifeo3 Thin Films
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