Enhancement of the light extraction of GaN-based green light emitting diodes via nanohybrid structures

2013 ◽  
Vol 13 (6) ◽  
pp. 1042-1045 ◽  
Author(s):  
Taejoon Son ◽  
Kyung-Young Jung ◽  
Jinsub Park
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Light Extraction ◽  
Light Emitting

Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes

2010 ◽  
Vol 27 (3) ◽  
pp. 038503 ◽  
Author(s):  
Pan Yao-Bo ◽  
Hao Mao-Sheng ◽  
Qi Sheng-Li ◽  
Fang Hao ◽  
Zhang Guo-Yi
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Light Extraction ◽  
Light Emitting

Improved Light Extraction of GaN-Based Green Light-Emitting Diodes with an Antireflection Layer of ZnO Nanorod Arrays

2011 ◽  
Vol 14 (3) ◽  
pp. H120 ◽  
Author(s):  
Jang-Won Kang ◽  
Min-Suk Oh ◽  
Yong-Seok Choi ◽  
Chu-Young Cho ◽  
Tae-Young Park ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Light Extraction ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Light Emitting

scholarly journals Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects

2017 ◽  
Author(s):  
Ilya E. Titkov ◽  
Sergey Yu Karpov ◽  
Amit Yadav ◽  
Denis Mamedov ◽  
Vera L. Zerova ◽  
...  
Keyword(s):  
Active Region ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Emission Spectra ◽  
Light Extraction ◽  
Extended Defects ◽  
Light Emitting ◽  
Industrial Grade ◽  
Wide Range ◽  
Two Peaks

External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been measured in a wide range of operating currents at various temperatures from 13 K to 300 K. Unlike blue LEDs, the efficiency as a function of current is found to have a multi-peak character, which could not be fitted by a simple ABC-model. This observation correlated with splitting of LED emission spectra into two peaks at certain currents. The characterization data are interpreted in terms of non-uniformity of the LED active region, which is tentatively attributed to extended defects like V-pits. We suggest a new approach to evaluation of temperature-dependent light extraction and internal quantum efficiencies taking into account the active region non-uniformity. As a result, the temperature dependence of light extraction and internal quantum efficiencies have been evaluated in the temperature range mentioned above and compared with those of blue LEDs.

scholarly journals Purcell effect and light extraction of Tamm-plasmon-cavity green light-emitting diodes

2019 ◽  
Vol 27 (21) ◽  
pp. 30852 ◽  
Author(s):  
Yi-dong Zheng ◽  
Fu-an Xiao ◽  
Wen-jie Liu ◽  
Xiao-long Hu
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Light Extraction ◽  
Purcell Effect ◽  
Light Emitting

scholarly journals Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects

2017 ◽  
Author(s):  
Ilya E. Titkov ◽  
Sergey Yu Karpov ◽  
Amit Yadav ◽  
Denis Mamedov ◽  
Vera L. Zerova ◽  
...  
Keyword(s):  
Active Region ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Emission Spectra ◽  
Light Extraction ◽  
Extended Defects ◽  
Light Emitting ◽  
Industrial Grade ◽  
Wide Range ◽  
Two Peaks

External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been measured in a wide range of operating currents at various temperatures from 13 K to 300 K. Unlike blue LEDs, the efficiency as a function of current is found to have a multi-peak character, which could not be fitted by a simple ABC-model. This observation correlated with splitting of LED emission spectra into two peaks at certain currents. The characterization data are interpreted in terms of non-uniformity of the LED active region, which is tentatively attributed to extended defects like V-pits. We suggest a new approach to evaluation of temperature-dependent light extraction and internal quantum efficiencies taking into account the active region non-uniformity. As a result, the temperature dependence of light extraction and internal quantum efficiencies have been evaluated in the temperature range mentioned above and compared with those of blue LEDs.

Polystyrene-catalytic indium–tin–oxide nanorods grown on green light-emitting diodes for enhancing light extraction

2016 ◽  
Vol 9 (8) ◽  
pp. 082102 ◽  
Author(s):  
Zhina Gong ◽  
Qiang Li ◽  
Yufeng Li ◽  
Han Xiong ◽  
Hao Liu ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Light Extraction ◽  
Light Emitting ◽  
Oxide Nanorods

Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal

2010 ◽  
Vol 96 (25) ◽  
pp. 251103 ◽  
Author(s):  
Ja-Yeon Kim ◽  
Min-Ki Kwon ◽  
Seong-Ju Park ◽  
Sang Hoon Kim ◽  
Ki-Dong Lee
Keyword(s):  
Photonic Crystal ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Light Extraction ◽  
Light Emitting ◽  
Selective Area

scholarly journals Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2200
Author(s):  
Po-Hsun Lei ◽  
Po-Chun Yang ◽  
Po-Chun Huang
Keyword(s):  
Photonic Crystal ◽  
Spin Coating ◽  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Light Output ◽  
Green Light ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Emitting ◽  
Green Leds

We fabricated the photonic-crystal-structured p-GaN (PC-structured p-GaN) nanorods using the modified polystyrene nanosphere (PS NS) lithography method for InGaN/GaN green light-emitting diodes (LEDs) to enhance the light extraction efficiency (LEE). A modified PS NS lithography method including two-times spin-coating processes and the post-spin-coating heating treatment was used to obtain a self-assembly close-packed PS NS array of monolayer as a mask and then a partially dry etching process was applied to PS NS, SiO2, and p-GaN to form PC-structured p-GaN nanorods on the InGaN/GaN green LEDs. The light output intensity and LEE of InGaN/GaN green LEDs with the PC-structured p-GaN nanorods depend on the period, diameter, and height of PC-structured p-GaN nanorods. RSoft FullWAVE software based on the three-dimension finite-difference time-domain (FDTD) algorithm was used to calculate the LEE of InGaN/GaN green LEDs with PC-structured p-GaN nanorods of the varied period, diameter, and height. The optimal period, diameter, and height of PC-structured p-GaN nanorods are 150, 350, and 110 nm. The InGaN/GaN green LEDs with optimal PC-structured p-GaN nanorods exhibit an enhancement of 41% of emission intensity under the driving current of 20 mA as compared to conventional LED.

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