Fabrication and characterization of aluminum-doped zinc oxide Schottky diodes on n-GaN

2012 ◽  
Vol 12 (6) ◽  
pp. 1536-1540 ◽  
Author(s):  
T. Han ◽  
Y. Shi ◽  
H. Wu ◽  
C. Liu
Keyword(s):  
Zinc Oxide ◽  
Schottky Diodes ◽  
Aluminum Doped Zinc Oxide ◽  
Fabrication And Characterization

Characterization of electrospun aluminum-doped zinc oxide nanofibers

2008 ◽  
Vol 517 (3) ◽  
pp. 1262-1267 ◽  
Author(s):  
Deuk Yong Lee ◽  
Jung-Eun Cho ◽  
Nam-Ihn Cho ◽  
Myung-Hyun Lee ◽  
Se-Jong Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Aluminum Doped Zinc Oxide

scholarly journals Application of Electron Backscatter Diffraction (EBSD) for Crystallographic Characterization of Aluminum-Doped Zinc Oxide Sputtered Films

2013 ◽  
Vol 19 (S4) ◽  
pp. 103-104
Author(s):  
C.B. Garcia ◽  
E. Ariza ◽  
C.J. Tavares
Keyword(s):  
Electron Microscopy ◽  
Grain Size ◽  
Zinc Oxide ◽  
Electron Backscatter Diffraction ◽  
Wide Range ◽  
Electron Backscatter ◽  
Aluminum Doped Zinc Oxide ◽  
Ebsd Technique ◽  
Backscatter Diffraction

Zinc Oxide is a wide band-gap compound semiconductor that has been used in optoelectronic and photovoltaic applications due to its good electrical and optical properties. Aluminium has been an efficient n-type dopant for ZnO to produce low resistivity films and high transparency to visible light. In addition, the improvement of these properties also depends on the morphology, crystalline structure and deposition parameters. In this work, ZnO:Al films were produced by d.c. pulsed magnetron sputtering deposition from a ZnO ceramic target (2.0 wt% Al2O3) on glass substrates, at a temperature of 250 ºC.The crystallographic orientation of aluminum doped zinc oxide (ZnO:Al) thin films has been studied by Electron Backscatter Diffraction (EBSD) technique. EBSD coupled with Scanning Electron Microscopy (SEM) is a powerful tool for the microstructural and crystallographic characterization of a wide range of materials.The investigation by EBSD technique of such films presents some challenges since this analysis requires a flat and smooth surface. This is a necessary condition to avoid any shadow effects during the experiments performed with high tilting conditions (70º). This is also essential to ensure a good control of the three dimensional projection of the crystalline axes on the geometrical references related to the sample.Crystalline texture is described by the inverse pole figure (IPF) maps (Figure 1). Through EBSD analysis it was observed that the external surface of the film presents a strong texture on the basal plane orientation (grains highlighted in red colour). Furthermore it was possible to verify that the grain size strongly depends on the deposition time (Figure 1 (a) and (b)). The electrical and optical film properties improve with increasing of the grain size, which can be mainly, attributed to the decrease in scattering grain boundaries which leads to an increasing in carrier mobility (Figure 2).The authors kindly acknowledge the financial support from the Portuguese Foundation for Science and Technology (FCT) scientific program for the National Network of Electron Microscopy (RNME) EDE/1511/RME/2005.

scholarly journals Fabrication and characterization of In-doped zinc oxide nanoarrays

2009 ◽  
Vol 58 (4) ◽  
pp. 2702
Author(s):  
Li Hui-Feng ◽  
Gao Xiang-Xi ◽  
Huang Yun-Hua ◽  
Wang Jian ◽  
Zhang Yue ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Fabrication And Characterization

The Fabrication and Characterization of Well Aligned Petal-Like Arsenic-Doped Zinc Oxide Microrods

2011 ◽  
Vol 28 (10) ◽  
pp. 108103 ◽  
Author(s):  
Qiu-Ju Feng ◽  
Jun-Yan Jiang ◽  
Peng-Cheng Tao ◽  
Shuang Liu ◽  
Rui-Zhuo Xu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Fabrication And Characterization
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