Role of oxygen vacancies formed between top electrodes and epitaxial NiO films in bipolar resistance switching

2012 ◽  
Vol 12 (2) ◽  
pp. 369-372 ◽  
Author(s):  
S.R. Lee ◽  
H.M. Kim ◽  
K. Char ◽  
J.H. Jang ◽  
M. Kim ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Resistance Switching ◽  
Bipolar Resistance Switching ◽  
Nio Films

MECHANISM STUDY ON OXYGEN VACANCY INDUCED RESISTANCE SWITCHING IN Au/LaMnO3/SrNb0.01Ti0.99O3

2013 ◽  
Vol 27 (11) ◽  
pp. 1350074 ◽  
Author(s):  
YU-LING JIN ◽  
ZHONG-TANG XU ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Vacancy Concentration ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Oxygen Vacancy Concentration ◽  
Mechanism Study ◽  
Switching Performance ◽  
Switching Characteristics

Mechanism of resistance switching in heterostructure Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 was investigated. In Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were fabricated under various oxygen pressures. The content of the oxygen vacancies has a significant impact on the resistance switching performance. We propose that the resistance switching characteristics of Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 arise from the modulation of the Au / LaMnO 3 Schottky barrier due to the change of the oxygen vacancy concentration at Au / LaMnO 3 interface under the external electric field. The effect of the oxygen vacancy concentration on the resistance switching is explained based on the self-consistent calculation. Both the experimental and numerical results confirm the important role of the oxygen vacancies in the resistance switching behavior.

The role of zinc vacancies in bipolar resistance switching of Ag/ZnO/Pt memory structures

2012 ◽  
Vol 23 (37) ◽  
pp. 375201 ◽  
Author(s):  
Vadim Sh Yalishev ◽  
Shavkat U Yuldashev ◽  
Yeon Soo Kim ◽  
Bae Ho Park
Keyword(s):  
Resistance Switching ◽  
Bipolar Resistance Switching ◽  
Memory Structures

Magnetic manipulation by resistance switching in CeO2/PrBa2Cu3O7−δ/Pt heterostructure: The role of oxygen vacancies

2013 ◽  
Vol 103 (26) ◽  
pp. 262411 ◽  
Author(s):  
C. Yun ◽  
X. G. Chen ◽  
J. B. Fu ◽  
J. R. Sun ◽  
Y. X. Zhang ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Resistance Switching ◽  
Magnetic Manipulation

Investigation of Interface Formed between Top Electrodes and Epitaxial NiO Films for Bipolar Resistance Switching

2010 ◽  
Vol 49 (3) ◽  
pp. 031102 ◽  
Author(s):  
Seung Ran Lee ◽  
Hoon Min Kim ◽  
Jung Hoon Bak ◽  
Yun Daniel Park ◽  
Kookrin Char ◽  
...  
Keyword(s):  
Resistance Switching ◽  
Bipolar Resistance Switching ◽  
Nio Films

Effect of Cation Substitution on Bipolar Resistance Switching Behavior in Epitaxially Grown NiO Films

2010 ◽  
Vol 49 (7) ◽  
pp. 075801 ◽  
Author(s):  
Hoonmin Kim ◽  
Seungran Lee ◽  
Junghoon Bak ◽  
Myungrae Jo ◽  
Yun D. Park ◽  
...  
Keyword(s):  
Resistance Switching ◽  
Switching Behavior ◽  
Cation Substitution ◽  
Bipolar Resistance Switching ◽  
Nio Films

scholarly journals Role of NiO in the nonlocal spin transport through thin NiO films on Y3Fe5O12

2021 ◽  
Vol 103 (14) ◽  
Author(s):  
Geert R. Hoogeboom ◽  
Geert-Jan N. Sint Nicolaas ◽  
Andreas Alexander ◽  
Olga Kuschel ◽  
Joachim Wollschläger ◽  
...  
Keyword(s):  
Spin Transport ◽  
Nio Films

Balanced performance for β-Ga2O3 solar blind photodetectors: The role of oxygen vacancies

2021 ◽  
Vol 112 ◽  
pp. 110808
Author(s):  
Jiang Wang ◽  
Yuanqiang Xiong ◽  
Lijuan Ye ◽  
Wanjun Li ◽  
Guoping Qin ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Solar Blind

Role of oxygen vacancies on ferromagnetism in Fe-doped TiO2 thin films

2007 ◽  
Vol 102 (7) ◽  
pp. 073905 ◽  
Author(s):  
H. J. Meng ◽  
D. L. Hou ◽  
L. Y. Jia ◽  
X. J. Ye ◽  
H. J. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Tio2 Thin Films ◽  
Doped Tio2
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