Synthesis of titanium dioxide in O2/Ar/SO2/TiCl4 microwave torch plasma and its band gap narrowing

2011 ◽  
Vol 11 (3) ◽  
pp. 517-520 ◽  
Author(s):  
Yong Cheol Hong ◽  
Taihyeop Lho ◽  
Bong Ju Lee ◽  
Han Sup Uhm ◽  
O-Pil Kwon ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Band Gap ◽  
Band Gap Narrowing

Band gap narrowing of titanium dioxide by sulfur doping

2002 ◽  
Vol 81 (3) ◽  
pp. 454-456 ◽  
Author(s):  
T. Umebayashi ◽  
T. Yamaki ◽  
H. Itoh ◽  
K. Asai
Keyword(s):  
Titanium Dioxide ◽  
Band Gap ◽  
Sulfur Doping ◽  
Band Gap Narrowing

Band-Gap Narrowing of Titanium Dioxide by Nitrogen Doping

2001 ◽  
Vol 40 (Part 2, No. 6A) ◽  
pp. L561-L563 ◽  
Author(s):  
Takeshi Morikawa ◽  
Ryoji Asahi ◽  
Takeshi Ohwaki ◽  
Koyu Aoki ◽  
Yasunori Taga
Keyword(s):  
Titanium Dioxide ◽  
Band Gap ◽  
Nitrogen Doping ◽  
Band Gap Narrowing

Band gap narrowing of titanium dioxide (TiO2) nanocrystals by electrochemically active biofilms and their visible light activity

Nanoscale ◽  
2013 ◽  
Vol 5 (14) ◽  
pp. 6323 ◽  
Author(s):  
Shafeer Kalathil ◽  
Mohammad Mansoob Khan ◽  
Sajid Ali Ansari ◽  
Jintae Lee ◽  
Moo Hwan Cho
Keyword(s):  
Titanium Dioxide ◽  
Visible Light ◽  
Band Gap ◽  
Tio2 Nanocrystals ◽  
Electrochemically Active ◽  
Light Activity ◽  
Band Gap Narrowing

Band-gap narrowing and potential fluctuation in Si-doped GaN

1999 ◽  
Vol 74 (1) ◽  
pp. 102-104 ◽  
Author(s):  
In-Hwan Lee ◽  
J. J. Lee ◽  
P. Kung ◽  
F. J. Sanchez ◽  
M. Razeghi
Keyword(s):  
Band Gap ◽  
Potential Fluctuation ◽  
Si Doped ◽  
Band Gap Narrowing

Sol–gel synthesis and optical properties of titanium dioxide thin film

2018 ◽  
Vol 32 (09) ◽  
pp. 1850076 ◽  
Author(s):  
Irfan Ullah ◽  
Shaukat Ali Khattak ◽  
Tanveer Ahmad ◽  
Saman ◽  
Nayab Ali Ludhi
Keyword(s):  
Thin Film ◽  
Titanium Dioxide ◽  
Optical Properties ◽  
Band Gap ◽  
Surface Defects ◽  
Sol Gel ◽  
Luminescent Properties ◽  
Localized States ◽  
Indirect Transition ◽  
Transmission And Absorption

The titanium dioxide (TiO2) is synthesized by sol–gel method using titanium-tetra-iso-propoxide (TTIP) as a starting material, and deposited on the pre-cleaned glass substrate using spin coating technique at optimized parameters. Energy dispersive X-ray (EDX) spectroscopy confirms successful TiO2 growth. The optical properties concerning the transmission and absorption spectra show 85% transparency and 3.28 eV wide optical band gap for indirect transition, calculated from absorbance. The exponential behavior of absorption edge is observed and attributed to the localized states electronic transitions, curtailed in the indirect band gap of the thin film. The film reveals decreasing refractive index with increasing wavelength. The photoluminescence (PL) study ascertains that luminescent properties are due to the surface defects.

Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN:Si

2002 ◽  
Vol 33 (4) ◽  
pp. 365-369 ◽  
Author(s):  
C. Moysés Araújo ◽  
J.R.L. Fernandez ◽  
A. Ferreira da Silva ◽  
I. Pepe ◽  
J.R. Leite ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Band Gap ◽  
Band Gap Narrowing

Optical Properties of Alq3/TiO2 BDR Structure Processed by Spin Coating Technique

MRS Advances ◽  
2019 ◽  
Vol 4 (11-12) ◽  
pp. 661-666
Author(s):  
L. Ajith DeSilva ◽  
Sarahn Nazaret ◽  
A. G. U. Perera ◽  
T. M. W. J. Bandara
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Optical Properties ◽  
Band Gap ◽  
Spin Coating ◽  
Light Emission ◽  
Wide Band ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Pl Quenching

ABSTRACTOne-dimensional hybrid Distributed Bragg Reflector (DBR) is constructed using Tris (8-hydroxy) quinoline aluminum (Alq3) molecules and Titanium dioxide (TiO2) nanoparticles via spin coating process. Light emission from thin films of low molecular weight organic semiconductor of Alq3 is dominated by excitons. This material has been widely used as a superior emitter for organic light emitting diodes. Titanium dioxide (TiO2) is an inorganic semiconductor with a high band gap. Photoluminescence (PL) of thin films of Alq3 showed a broad PL peak at 530 nm. In DBR structures, PL quenching is observed but there is no shift in the PL peak of the Alq3. The PL quenching is tentatively attributed to energy transfer via sensitization to wide band gap TiO2 layers. A simple excitonic model is suggested to explain the observation. Fabrication process and optical properties of the structure are presented.

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