Structure and electrical properties of polyaniline synthesized in presence of low magnetic field

2009 ◽  
Vol 9 (2) ◽  
pp. 289-295 ◽  
Author(s):  
R.A. Nafdey ◽  
D.S. Kelkar
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Low Magnetic Field

Effects of Low Magnetic Fields on Gold-YBCO Contacts

1989 ◽  
Vol 169 ◽  
Author(s):  
Yonhua Tzeng ◽  
Mitchell A. Belser
Keyword(s):  
Magnetic Field ◽  
Critical Temperature ◽  
Electrical Properties ◽  
Magnetic Fields ◽  
Contact Resistance ◽  
High Magnetic Field ◽  
High Current ◽  
Long Time ◽  
Low Magnetic Field ◽  
The Magnetic Field

AbstractThe effects of low magnetic field (0–40 Gauss) on electrical properties of gold-YBCO contacts are investigated. The contact resistance increases significantly with applied magnetic fields. For high magnetic field or when high current is flowing through the contact, the contact resistance decays after removing the magnetic field to a finite value greater than that is measured before the contact is exposed to the magnetic field and stays there for long time as long as the sample is kept below the superconductivity critical temperature.

scholarly journals Synthesis of polyaniline in presence of low magnetic field, its structure and electrical properties

2008 ◽  
Vol 2 (2) ◽  
pp. 105-109
Author(s):  
Nafdey Renuka ◽  
◽  
Kelkar Deepali ◽  
Keyword(s):  
Magnetic Field ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Polymer Chain ◽  
Synthesis Process ◽  
Structure And Morphology ◽  
Low Magnetic Field ◽  
Chain Ordering

Polyaniline is synthesized chemically under the influence of low magnetic field of intensity 1KGauss. The effect of magnetic field during the synthesis process causes enhancement of electrical conductivity by two orders of magnitude. This increased electrical conductivity depends on the polymer chain ordering, as well as structure and morphology of the reported polymer.

Preparation and Electrical Properties of Aligned Carbon Nanotubes/Epoxy Resin Composites Induced by a Low Magnetic Field

2011 ◽  
Vol 189-193 ◽  
pp. 1340-1343 ◽  
Author(s):  
Yu Zhang ◽  
Chuan Guo Ma
Keyword(s):  
Magnetic Field ◽  
Carbon Nanotubes ◽  
Electrical Properties ◽  
Epoxy Resin ◽  
Field Direction ◽  
Magnetic Field Direction ◽  
Aligned Carbon Nanotubes ◽  
Low Magnetic Field ◽  
The Magnetic Field ◽  
Properties Of Composites

Aligned carbon nanotubes(CNTs)/epoxy resin(EP) composites were prepared under a low magnetic field (B<500mT) induction. The effect of different magnetic fields on the electrical and dielectrical properties of composites was investigated. The results show that the CNTs are aligned with rod-like aggregations instead of single CNTs when the magnetic field direction is vertical to the casting direction of samples, then electric conductivity, permittivity, dielectric loss of the composite are improved. And a larger magnetic field intensity and a bigger mould capacity can help the effect of magnetic field induction. However the CNTs are seriously aggregated and the electrical properties of composites change worse when the magnetic field direction is parallel to the casting direction of samples.

HYMU 80

Alloy Digest ◽  
1971 ◽  
Vol 20 (10) ◽  
Keyword(s):  
Magnetic Field ◽  
Fracture Toughness ◽  
Corrosion Resistance ◽  
Heat Treating ◽  
Initial Permeability ◽  
Nickel Iron ◽  
Technology Corporation ◽  
Carpenter Technology Corporation ◽  
Low Magnetic Field ◽  
Maximum Permeability

Abstract Carpenter HYMU 80 is an unoriented 80% nickel-iron-molybdenum alloy which offers extremely high initial permeability and maximum permeability with minimum hysteresis loss at low magnetic field strengths. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as fracture toughness. It also includes information on corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: Ni-5. Producer or source: Carpenter Technology Corporation. Originally published May 1953, revised October 1971.

Low magnetic field spin flops in giant magnetoresistance multilayers

1995 ◽  
Vol 148 (1-2) ◽  
pp. 329-330 ◽  
Author(s):  
H. Kano ◽  
A. Okabe ◽  
K. Kagawa ◽  
A. Suzuki ◽  
T. Yaoi ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Giant Magnetoresistance ◽  
Low Magnetic Field

scholarly journals TRANSPORT PROPERTIES OF 2D ELECTRON GAS IN AN n-InGaAs/GaAs DQW IN A VICINITY OF LOW MAGNETIC-FIELD-INDUCED HALL INSULATOR–QUANTUM HALL LIQUID TRANSITION

2007 ◽  
Vol 06 (03n04) ◽  
pp. 173-177
Author(s):  
YU. G. ARAPOV ◽  
S. V. GUDINA ◽  
G. I. HARUS ◽  
V. N. NEVEROV ◽  
N. G. SHELUSHININA ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electron Gas ◽  
Quantum Hall ◽  
Zero Magnetic Field ◽  
Double Quantum ◽  
Ballistic Regime ◽  
2D Electron Gas ◽  
Double Quantum Well ◽  
Liquid Transition ◽  
Low Magnetic Field

The resistivity (ρ) of low mobility dilute 2D electron gas in an n- InGaAs / GaAs double quantum well (DQW) exhibits the monotonic "insulating-like" temperature dependence (dρ/dT < 0) at T = 1.8–70 K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kBTτ/ħ > 0.1–3.5) for our samples, and the electron density is on an "insulating" side of the so-called B = 0 2D metal–insulator transition. We show that the observed features of localization and Landau quantization in a vicinity of the low magnetic-field-induced insulator–quantum Hall liquid transition is due to the σxy(T) anomalous T-dependence.

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

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