Carbon enhanced blue–violet luminescence in ZnO films grown by pulsed laser deposition

2008 ◽  
Vol 8 (3-4) ◽  
pp. 283-286 ◽  
Author(s):  
R.J. Mendelsberg ◽  
J. Kennedy ◽  
S.M. Durbin ◽  
R.J. Reeves
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Violet Luminescence

Large-sized-mismatched group-V element doped ZnO films fabricated on silicon substrates by pulsed laser deposition

Vacuum ◽  
2010 ◽  
Vol 84 (11) ◽  
pp. 1306-1309 ◽  
Author(s):  
Xiaofeng Xu ◽  
Yiqun Shen ◽  
Ning Xu ◽  
Wei Hu ◽  
Jushui Lai ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Silicon Substrates ◽  
Group V ◽  
Doped Zno

Characteristics of $a$-plane ZnO Films Grown on $r$-plane SapphireSubstrates by Using Pulsed Laser Deposition

2009 ◽  
Vol 55 (3(1)) ◽  
pp. 1098-1101 ◽  
Author(s):  
Hooyoung Song ◽  
Jae-Hoon Kim ◽  
EunKyu Kim ◽  
Sung-Min Hwang
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films

scholarly journals Effects of pressure and substrate temperature on the growth of Al-doped ZnO films by pulsed laser deposition

2020 ◽  
Vol 7 (1) ◽  
pp. 016414
Author(s):  
Reeson Kek ◽  
Kwan-Chu Tan ◽  
Chen Hon Nee ◽  
Seong Ling Yap ◽  
Song Foo Koh ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Doped Zno

Growth and Characterization of Urea Doped p-Type ZnO Thin Film Grown by Pulsed Laser Deposition

2009 ◽  
Vol 67 ◽  
pp. 127-130 ◽  
Author(s):  
Majumdar Sayanee ◽  
Banerji Pallab
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Laser Deposition ◽  
Zno Films ◽  
Group V ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
P Type

In the present study we have used urea as the source for doping nitrogen in ZnO since the most successful acceptor type dopant is the group V element like nitrogen. The nitrogen doped ZnO films have been deposited on glass substrates using Pulsed Laser Deposition technique using 248 nm KrF laser at energy 300 mJ by varying the number of laser pulses with a repetition rate of 10 pulse/sec in vacuum (10-6 mbar) at a constant temperature of 300 °C. The XRD pattern confirms the formation of wurtzite structure of ZnO, which is polycrystalline in nature. We have also performed UV absorption spectroscopy and the band gap is found to be 3.4 eV. Resistivity of the film increases with the increase of thickness for the undoped ZnO samples where the carrier concentrations are found to be of the order of 1017 cm-3. The mobility of the as-grown film is found to be 24.9 cm2/V-s. After doping with nitrogen the carrier concentration drops to the order of 1015 cm-3 and the mobility becomes 1.5 cm2/V-s. The mobility slightly varies with thickness. The resistivity increases to 1.3 KΩ-cm and the film shows p-type behavior. The results are explained on the basis of the available theory.

Ionic liquid/ZnO(0001̄) single crystal and epitaxial film interfaces studied through a combination of electrochemical measurements and a pulsed laser deposition process under vacuum

2019 ◽  
Vol 21 (45) ◽  
pp. 25506-25512
Author(s):  
Mariko Kanai ◽  
Ko Watanabe ◽  
Shingo Maruyama ◽  
Yuji Matsumoto
Keyword(s):  
Ionic Liquid ◽  
Ionic Liquids ◽  
Pulsed Laser Deposition ◽  
Epitaxial Film ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Zno Films ◽  
Doped Zno ◽  
Mg Doped

O-Polar ZnO(0001̄) single crystals and ZnO and Mg-doped ZnO films which were subsequently deposited on the ZnO crystals by pulsed laser deposition were electrochemically investigated through the interfaces with ionic liquids in a vacuum.

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