scholarly journals Observation of interdot coupling phenomena in nanocrystalline silicon point-contact structures

2006 ◽  
Vol 6 (3) ◽  
pp. 536-540 ◽  
Author(s):  
M.A.H. Khalafalla ◽  
H. Mizuta ◽  
S. Oda ◽  
Z.A.K. Durrani
Keyword(s):  
Point Contact ◽  
Nanocrystalline Silicon ◽  
Contact Structures ◽  
Interdot Coupling ◽  
Coupling Phenomena

scholarly journals Design and Investigation of SST/nc-Si:H/M (M = Ag, Au, Ni) and M/nc-Si:H/M Multifunctional Devices

2013 ◽  
Vol 2013 ◽  
pp. 1-7
Author(s):  
A. F. Qasrawi ◽  
Salam M. Kmail ◽  
Samah F. Assaf ◽  
Z. M. Saleh
Keyword(s):  
Short Circuit ◽  
Point Contact ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Open Circuit ◽  
Very High Frequency ◽  
Self Energy ◽  
Silicon Thin Films ◽  
Vapor Deposition Technique ◽  
Schottky Device

Hydrogenated nanocrystalline Silicon thin films prepared by the very high frequency chemical vapor deposition technique (VHF-CVD) on stainless steel (SST) substrates are used to design Schottky point contact barriers for the purpose of solar energy conversion and passive electronic component applications. In this process, the contact performance between SST and M (M = Ag, Au, and Ni) and between Ag, Au, and Ni electrodes was characterized by means of current-voltage, capacitance-voltage, and light intensity dependence of short circuit (Isc) current and open circuit voltage (Voc) of the contacts. Particularly, the devices ideality factors, barrier heights were evaluated by the Schottky method and compared to the Cheung's. Best Schottky device performance with lowest ideality factor suitable for electronic applications was observed in the SST/nc-Si:H/Ag structure. This device reflects a Voc of 229 mV with an Isc of 1.6 mA/cm2 under an illumination intensity of ~40 klux. On the other hand, the highest Isc being 9.0 mA/cm2 and the Voc of 53.1 mV were observed for Ni/nc-Si:H/Au structure. As these voltages represent the maximum biasing voltage for some of the designed devices, the SST/nc-Si:H/M and M/nc-Si:H/M can be regarded as multifunctional self-energy that provided electronic devices suitable for active or passive applications.

Phototransistors Using Point Contact Structures

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1955-1957 ◽  
Author(s):  
Yasushi Nagamune ◽  
Takeshi Noda ◽  
Yuzo Ohno ◽  
Yasuhiko Arakawa ◽  
Hiroyuki Sakaki ◽  
...  
Keyword(s):  
Point Contact ◽  
Contact Structures

Josephson Effect and Energy Gap Measurements from Nb/YBCO Point Contact Structures

1987 ◽  
pp. 1003-1009 ◽  
Author(s):  
A. Barone ◽  
A. Di Chiara ◽  
G. Peluso ◽  
U. Scotti di Uccio ◽  
A. M. Cucola ◽  
...  
Keyword(s):  
Josephson Effect ◽  
Energy Gap ◽  
Point Contact ◽  
Contact Structures

Phototransistors Using Point Contact Structures

1996 ◽  
Author(s):  
Yasushi NAGAMUNE ◽  
Takeshi NODA ◽  
Yuzo OHNO ◽  
Yasuhiko ARAKAWA ◽  
Hiroyuki SAKAKI ◽  
...  
Keyword(s):  
Point Contact ◽  
Contact Structures

Inter-grain coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistors

2005 ◽  
Vol 487 (1-2) ◽  
pp. 255-259
Author(s):  
M.A.H. Khalafalla ◽  
Z.A.K. Durrani ◽  
H. Mizuta ◽  
H. Ahmed ◽  
S. Oda
Keyword(s):  
Point Contact ◽  
Nanocrystalline Silicon ◽  
Coupling Effects

INTERFERENCE PHENOMENA DUE TO BEND DISCONTINUITIES IN POINT CONTACT STRUCTURES

1992 ◽  
pp. 139-149
Author(s):  
W. Yindeepol ◽  
A Chin ◽  
A. Weisshaar ◽  
S.M. Goodnick ◽  
J.C. Wu ◽  
...  
Keyword(s):  
Point Contact ◽  
Contact Structures

Nonlinear transport in quantum point contact structures

2002 ◽  
Vol 63 (1-3) ◽  
pp. 123-127 ◽  
Author(s):  
A.E Krishnaswamy ◽  
S.M Goodnick ◽  
M.N Wybourne ◽  
C Berven
Keyword(s):  
Point Contact ◽  
Contact Structures ◽  
Quantum Point Contact ◽  
Nonlinear Transport ◽  
Quantum Point

Resonance phenomenon in double-bend-point contact structures

1992 ◽  
Author(s):  
Jong C. Wu ◽  
Martin N. Wybourne ◽  
Andreas Weisshaar ◽  
Stephen M. Goodnick
Keyword(s):  
Point Contact ◽  
Resonance Phenomenon ◽  
Contact Structures
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