Development of a novel high optical quality ZnO thin films by PLD for III–V opto-electronic devices

2006 ◽  
Vol 6 (1) ◽  
pp. 103-108 ◽  
Author(s):  
K. Ramamoorthy ◽  
C. Sanjeeviraja ◽  
M. Jayachandran ◽  
K. Sankaranarayanan ◽  
Pankaj Misra ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Devices ◽  
Optical Quality ◽  
Zno Thin Films ◽  
High Optical Quality

High optical quality IZO (In2Zn2O5) thin films by PLD – A novel development for III–V opto-electronic devices

2006 ◽  
Vol 262 (1) ◽  
pp. 91-96 ◽  
Author(s):  
K. Ramamoorthy ◽  
K. Kumar ◽  
R. Chandramohan ◽  
K. Sankaranarayanan ◽  
R. Saravanan ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Devices ◽  
Optical Quality ◽  
High Optical Quality

Temperature dependence of the band gap of high optical quality CdS:Dy thin films based on exciton spectra

2018 ◽  
Vol 5 (12) ◽  
pp. 125902 ◽  
Author(s):  
Yu P Gnatenko ◽  
P M Bukivskij ◽  
M S Furier ◽  
A P Bukivskii ◽  
A S Opanasyuk
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Band Gap ◽  
Optical Quality ◽  
High Optical Quality

Plasma-Assisted MOCVD Growth of ZnO Thin Films

2005 ◽  
Vol 892 ◽  
Author(s):  
Maria Losurdo ◽  
Maria Michela Giangregorio ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
Graziella Malandrino ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
Zno Thin Films ◽  
Zno Films ◽  
Mocvd Growth ◽  
Metalorganic Chemical

AbstractZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) also plasma assisted (PA-MOCVD) on c-axis oriented sapphire (0001) and Si(001) substrates using the alternative Zn(TTA)2·tmed (HTTA=2-thenoyltrifluoroacetone,TMED=N,N,N’,N’-tetramethylethylendiamine) precursor. The structural, morphological and optical properties of ZnO films have been investigated. The results show that the O2 plasma assisted growth results in an improvement of the structure, in smoother morphologies and in a better optical quality with a sharp and intense exciton of ZnO films.

Photoluminescence of high optical quality CdS:Dy thin films deposited by close-spaced vacuum sublimation

2018 ◽  
Vol 197 ◽  
pp. 343-348 ◽  
Author(s):  
Yu.S. Yeromenko ◽  
Yu.P. Gnatenko ◽  
A.S. Opanasyuk ◽  
D.I. Kurbatov ◽  
P.M. Bukivskij ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Quality ◽  
Vacuum Sublimation ◽  
High Optical Quality

STRUCTURAL AND OPTICAL PROPERTIES OF ZnO SYNTHESIZED BY TEMPERATURE GRADIENT THERMAL OXIDATION

2010 ◽  
Vol 17 (05n06) ◽  
pp. 497-503 ◽  
Author(s):  
F. K. YAM ◽  
S. S. TNEH ◽  
Y.-Q. CHAI ◽  
W. S. LAU ◽  
Z. HASSAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Temperature Gradient ◽  
Thermal Oxidation ◽  
Optical Quality ◽  
Annealing Process ◽  
Zno Thin Films ◽  
Structural And Optical Properties ◽  
Fixed Temperature

In this work, a series of polycrystalline ZnO samples have been synthesized from Zn thin films deposited on Si (100) substrates by using thermal oxidation technique. The ZnO thin film samples grown by this technique were then characterized by a variety of structural and optical characterization tools. The results revealed that the use of novel annealing process i.e. the application of temperature gradient in the thermal treatment could enhance the structural and optical quality of the ZnO thin films significantly as compared to the normal annealing process, i.e. a fixed temperature under different durations. Apart from the improvement of structural and optical properties of ZnO thin films, another striking feature of this novel annealing process was the promotion of the growth of ZnO nanostructures.

High-optical-quality LiNbO 3 thin films obtained by pulsed laser deposition

1998 ◽  
Author(s):  
D. Ghica ◽  
Mariuca Gartner ◽  
F. Ciobanu ◽  
V. Nelea ◽  
C. Martin ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optical Quality ◽  
Laser Deposition ◽  
High Optical Quality

scholarly journals Formation and properties of copper chalcogenides thin films on polymers formed using sodium telluropentathionate

2013 ◽  
Vol 11 (7) ◽  
pp. 1163-1171
Author(s):  
Judita Šukytė ◽  
Remigijus Ivanauskas
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Room Temperature ◽  
Surface Characteristics ◽  
Xrd Analysis ◽  
Structural Features ◽  
Optical Quality ◽  
High Optical Quality ◽  
Copper Chalcogenides ◽  
Crystallite Sizes

AbstractThe preparative conditions were optimized to get chalcogens layers on the polymer — polyamide PA surface by sorption at room temperature using sodium telluropentathionate, Na2TeS4O6. Further interaction of chalcogenized dielectric with copper’s (I/II) salt solution leads to the formation of mixed CuxSy-CuxTey layers. Optical, electrical and surface characteristics of the layers are highly controlled by the deposition parameters. The stoichiometry of these layers was established by UV-Visible and AA spectrometry. Optical absorption (transmittance) experiments show the samples are of high optical quality. The band gaps of thin films were obtained from their optical absorption spectra, which were found in the range of 1.44–2.97 eV. XRD was used in combination with AFM to characterize chalcogenides layers’ structural features. XRD analysis confirmed the formation of mixed copper chalcogenides’ layers in the surface of PA with binary phases such as Cu2Te, Cu3.18Te2, copper telluride, Cu2.72Te2, vulcanite, CuTe, anilite, Cu7S4 and copper sulfide, Cu1.8S. The crystallite sizes of thin films calculated by the Scherer formula were found to be in the range of 3.07–13.53 nm for CuxSy crystallites and 4.06–20.79 nm for CuxTey crystallites. At room temperature an electrical resistance of CuxSy-CuxTey layers varies from 3.0×103 kΩ□−1 to 1.0 kΩ□−1.

Development of a novel high speed (electron-mobility) epi-n-ZnO thin films by L-MBE for III–V opto-electronic devices

2004 ◽  
Vol 4 (6) ◽  
pp. 679-684 ◽  
Author(s):  
K. Ramamoorthy ◽  
M. Jayachandran ◽  
K. Sankaranarayanan ◽  
Pankaj Misra ◽  
L.M. Kukreja ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Mobility ◽  
High Speed ◽  
Electronic Devices ◽  
Zno Thin Films

Preparation and Characterization of Sol-Gel Thin Films of KTIOPO4.

1992 ◽  
Vol 271 ◽  
Author(s):  
Mark A. Harmer ◽  
Mark G. Roelofs
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Precursor Chemistry ◽  
Optical Quality ◽  
Growth Patterns ◽  
Potassium Titanyl Phosphate ◽  
High Optical Quality ◽  
Grain Sizes ◽  
Component Systems

ABSTRACTIn this paper we describe a novel route for the formation of thin films of potassium titanyl phosphate (KTiOPO4 KTP) via a sol-gel route. The ability to form films of high optical quality depends upon the precursor chemistry developed. Formation of stoichiometric films is especially challenging in three component systems and a number of precursors have been investigated. The basic chemistry, processing and resulting microstructure will be described. Transparent, dense and continuous films have been prepared with grain sizes typically of 0.3μm or less depending upon the processing conditions. Some textured growth patterns are observed although the films are essentially polycrystalline. Using the prism coupling technique the films have been found to exhibit waveguiding.

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