GaAs layer on c-plane sapphire for light emitting sources

2021 ◽  
Vol 542 ◽  
pp. 148554
Author(s):  
Rahul Kumar ◽  
Samir K. Saha ◽  
Andrian Kuchuk ◽  
Yurii Maidaniuk ◽  
Fernando Maia de Oliveira ◽  
...  
Keyword(s):  
Gaas Layer ◽  
Light Emitting

High-Performance Structure of Light-Emitting Diode for GaAs on Si Tetsuroh Minemura

1991 ◽  
Vol 240 ◽  
Author(s):  
Junko Asano ◽  
Yoshiaki Yazawa
Keyword(s):  
Light Intensity ◽  
High Performance ◽  
Light Emitting Diode ◽  
Gaas Layer ◽  
Continuous Operation ◽  
Light Emitting ◽  
Si Substrates ◽  
Gaas On Si ◽  
Performance Structure

ABSTRACTThe Light-emitting diode (LED) structures have been investigated to realize high-performance LEDs on Si substrates. The light intensity of the LEDs with p-GaAs / n-GaAs / Si structures, which was effected from thickness of the p-GaAs layer, was only about 55% of the homoepitaxialLED. The light intensity of the LED with an n-GaAs/p-GaAs/Si structure, however, was about four times stronger than those of p-GaAs/n-GaAs/Si structures. After continuous operation for two hours, the intensity still kept much stronger than those of the LEDs with p-GaAs / n-GaAs / Si structures, although it decreased to 15% of the homoepitaxial LED.

Electronic structure studies of conducting polymers by electron energy-loss spectroscopy

1996 ◽  
Vol 54 ◽  
pp. 160-161
Author(s):  
J. Fink
Keyword(s):  
Electronic Structure ◽  
Conducting Polymers ◽  
Conjugated Polymers ◽  
Electron Acceptors ◽  
Electron Donors ◽  
Light Emitting ◽  
One Dimensional ◽  
New Class ◽  
Electrical Conductivities ◽  
Electron Energy Loss

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.

Observation of GaAs/AlAs Superlattice Structures in both Secondary and Backscattcred Electron Imaging Modes with an Ultrahigh Resolution Scanning Electron Microscope

1990 ◽  
Vol 48 (1) ◽  
pp. 404-405
Author(s):  
K. Ogura ◽  
A. Ono ◽  
S. Franchi ◽  
P.G. Merli ◽  
A. Migliori
Keyword(s):  
Gaas Layer ◽  
Objective Lens ◽  
Superlattice Structure ◽  
Backscattered Electron ◽  
Instrumental Resolution ◽  
Electron Microscopes ◽  
Superlattice Structures ◽  
Electron Imaging ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

In the last few years the development of Scanning Electron Microscopes (SEM), equipped with a Field Emission Gun (FEG) and using in-lens specimen position, has allowed a significant improvement of the instrumental resolution . This is a result of the fine and bright probe provided by the FEG and by the reduced aberration coefficients of the strongly excited objective lens. The smaller specimen size required by in-lens instruments (about 1 cm, in comparison to 15 or 20 cm of a conventional SEM) doesn’t represent a serious limitation in the evaluation of semiconductor process techniques, where the demand of high resolution is continuosly increasing. In this field one of the more interesting applications, already described (1), is the observation of superlattice structures.In this note we report a comparison between secondary electron (SE) and backscattered electron (BSE) images of a GaAs / AlAs superlattice structure, whose cross section is reported in fig. 1. The structure consist of a 3 nm GaAs layer and 10 pairs of 7 nm GaAs / 15 nm AlAs layers grown on GaAs substrate. Fig. 2, 3 and 4 are SE images of this structure made with a JEOL JSM 890 SEM operating at an accelerating voltage of 3, 15 and 25 kV respectively. Fig. 5 is a 25 kV BSE image of the same specimen. It can be noticed that the 3nm layer is always visible and that the 3 kV SE image, in spite of the poorer resolution, shows the same contrast of the BSE image. In the SE mode, an increase of the accelerating voltage produces a contrast inversion. On the contrary, when observed with BSE, the layers of GaAs are always brighter than the AlAs ones , independently of the beam energy.

Synchronization of Chaotic Quantum Dot Light Emitting Diodes under Optical Feedback Effect

2020 ◽  
pp. 144-148
Keyword(s):  
Quantum Dot ◽  
Delay Time ◽  
Chaos Synchronization ◽  
Optical Feedback ◽  
Light Emitting Diode ◽  
Feedback Effect ◽  
Complete Synchronization ◽  
Light Emitting ◽  
Coupling Methods ◽  
Coupling Parameters

Chaos synchronization of delayed quantum dot light emitting diode has been studied theortetically which are coupled via the unidirectional and bidirectional. at synchronization of chaotic, The dynamics is identical with delayed optical feedback for those coupling methods. Depending on the coupling parameters and delay time the system exhibits complete synchronization, . Under proper conditions, the receiver quantum dot light emitting diode can be satisfactorily synchronized with the transmitter quantum dot light emitting diode due to the optical feedback effect.

Organic Light Emitting Diodes - Innovative Light Sources

2019 ◽  
pp. 101-107
Author(s):  
Sergei A. Stakharny
Keyword(s):  
Light Source ◽  
Organic Light Emitting Diodes ◽  
Organic Leds ◽  
Light Sources ◽  
High Quality ◽  
Light Emitting ◽  
Organic Light ◽  
Lighting Systems ◽  
Physical Principles ◽  
Prospects Of Application

This article is a review of the new light source – organic LEDs having prospects of application in general and special lighting systems. The article describes physical principles of operation of organic LEDs, their advantages and principal differences from conventional non-organic LEDs and other light sources. Also the article devoted to contemporary achievements and prospects of development of this field in the spheres of both general and museum lighting as well as other spheres where properties of organic LEDs as high-quality light sources may be extremely useful.

Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

2001 ◽  
Vol 171 (8) ◽  
pp. 857 ◽  
Author(s):  
Igor L. Krestnikov ◽  
V.V. Lundin ◽  
A.V. Sakharov ◽  
D.A. Bedarev ◽  
E.E. Zavarin ◽  
...  
Keyword(s):  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices
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