Thermally reduced graphene oxide showing n- to p-type electrical response inversion with water adsorption

2020 ◽  
Vol 531 ◽  
pp. 147285
Author(s):  
Azhar Ali Haidry ◽  
Zhe Wang ◽  
Qawareer Fatima ◽  
Ali Zavabeti ◽  
Lijuan Xie ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Water Adsorption ◽  
Electrical Response ◽  
Reduced Graphene ◽  
P Type

scholarly journals N-doped reduced graphene oxide for room-temperature NO gas sensors

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yu-Sung Chang ◽  
Feng-Kuan Chen ◽  
Du-Cheng Tsai ◽  
Bing-Hau Kuo ◽  
Fuh-Sheng Shieu
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Room Temperature ◽  
Gas Sensing ◽  
Ambient Conditions ◽  
Gas Sensitivity ◽  
Nitrogen Doped ◽  
Low Concentrations ◽  
Reduced Graphene ◽  
P Type

AbstractIn this study, we use nitrogen-doped to improving the gas-sensing properties of reduced graphene oxide. Graphene oxide was prepared according to a modified Hummers’ method and then nitrogen-doped reduced graphene oxide (N-rGO) was synthesized by a hydrothermal method using graphene oxide and NH4OH as precursors. The rGO is flat and smooth with a sheet-like morphology while the N-rGO exhibits folded morphology. This type of folding of the surface morphology can increase the gas sensitivity. The N-rGO and the rGO sensors showed n-type and p-type semiconducting behaviors in ambient conditions, respectively, and were responsive to low concentrations of NO gases (< 1000 ppb) at room temperature. The gas-sensing results showed that the N-rGO sensors could detect NO gas at concentrations as low as 400 ppb. The sensitivity of the N-rGO sensor to 1000 ppb NO (1.7) is much better than that of the rGO sensor (0.012). Compared with pure rGO, N-rGO exhibited a higher sensitivity and excellent reproducibility.

Direct Growth of Wafer-Scale, Transparent, p-Type Reduced-Graphene-Oxide-like Thin Films by Pulsed Laser Deposition

ACS Nano ◽  
2020 ◽  
Vol 14 (3) ◽  
pp. 3290-3298
Author(s):  
M. M. Juvaid ◽  
Soumya Sarkar ◽  
Pranjal Kumar Gogoi ◽  
Siddhartha Ghosh ◽  
Meenakshi Annamalai ◽  
...  
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
Pulsed Laser Deposition ◽  
Reduced Graphene Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Wafer Scale ◽  
Reduced Graphene ◽  
Direct Growth ◽  
P Type

Physicoelectrochemical properties of facilely electrosynthesized reduced graphene oxide/p-type conductive polymer nanocomposite film

2016 ◽  
Vol 40 (3) ◽  
pp. 2565-2573 ◽  
Author(s):  
Maryam Naseri ◽  
Lida Fotouhi ◽  
Ali Ehsani ◽  
Ferydon Babaei
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Methanol Oxidation ◽  
Modified Electrode ◽  
Nanocomposite Film ◽  
Conductive Polymer ◽  
Polymer Nanocomposite ◽  
Reduced Graphene ◽  
Good Uniformity ◽  
P Type

As electro-active electrodes, composites of reduced graphene oxide and poly ortho aminophenol (POAP) with good uniformity are prepared by electropolymerization. In comparison with Ni-POAP, the Ni-rGO/POAP-modified electrode shows a higher response for methanol oxidation.

Reduced Graphene Oxide for Room Temperature Hydrogen Storage Application

2015 ◽  
Vol 1086 ◽  
pp. 91-95 ◽  
Author(s):  
A. Venkatesan ◽  
Raj Nanalal Patel ◽  
E.S. Kannan
Keyword(s):  
Graphene Oxide ◽  
Electric Field ◽  
Hydrogen Storage ◽  
Reduced Graphene Oxide ◽  
Room Temperature ◽  
Structural Defects ◽  
Back Gate ◽  
Hot Air ◽  
Reduced Graphene ◽  
P Type

Graphene oxide (GO) is extracted from graphite oxide synthesized using modified Hummers method. The extracted GO solution is then drop casted onto a p type silicon substrate and dried in hot air oven. The dried solution is annealed at a temperature of about 200 degree Celsius for about one hour to obtain thermally reduced graphene oxide (RGO). Such thermally synthesized RGO usually have a lot of structural defects which can act as a binding site for hydrogen. The binding efficiency of hydrogen to defect centers can be increased by applying electric field to RGO as it changes the carrier concentration (doping) on the surface. This induces more polarization in the hydrogen molecule resulting in strong binding force, thereby increasing its hydrogen storage efficiency. In our experiment we have demonstrated room temperature electric field doping in RGO films by modulating the channel current by changing the back gate voltage which is a precursor for employing RGO in hydrogen storage applications.KeywordsGraphene oxide, Reduced graphene oxide, Field effect, Hydrogen storage, and Defects

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