Covalently attachment of aliphatic linear non-branched alcohols to silicon oxide and glass substrates in liquid paraffin solvent

2020 ◽  
Vol 509 ◽  
pp. 145102
Author(s):  
Ali Alavi ◽  
Reza Adl ◽  
Nasser Safari
2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.


2014 ◽  
Vol 92 (7/8) ◽  
pp. 783-788 ◽  
Author(s):  
Solomon Agbo ◽  
Pavol Sutta ◽  
Pavel Calta ◽  
Rana Biswas ◽  
Bicai Pan

We have synthesized silicon nanocrystalline structures from thermal annealing of thin film amorphous silicon-based multilayers. The annealing procedure that was carried out in vacuum at temperatures up to 1100 °C is integrated in a X-ray diffraction (XRD) setup for real-time monitoring of the formation phases of the nanostructures. The microstructure of the crystallized films is investigated through experimental measurements combined with atomistic simulations of realistic nanocrystalline silicon (nc-Si) models. The multilayers consisting of uniformly alternating thicknesses of hydrogenated amorphous silicon and silicon oxide (SiO2) were deposited by plasma enhanced chemical vapor deposition on crystalline silicon and Corning glass substrates. The crystallized structure consisting of nc-Si structures embedded in an amorphous matrix were further characterized through XRD, Raman spectroscopy, and Fourier transform infrared measurements. We are able to show the different stages of nanostructure formation and how the sizes and the crystallized mass fraction can be controlled in our experimental synthesis. The crystallized silicon structures with large crystalline filling fractions exceeding 50% have been simulated with a robust classical molecular dynamics technique. The crystalline filling fractions and structural order of nc-Si obtained from this simulation are compared with our Raman and XRD measurements.


2014 ◽  
Vol 970 ◽  
pp. 102-105
Author(s):  
Jian Wei Hoon ◽  
Kah Yoong Chan ◽  
Cheng Yang Low

In this work, silicon dioxide (SiO2) films were fabricated on indium tin oxide (ITO) coated glass substrates by radio frequency (RF) magnetron sputtering deposition technique. The deposition rate of the magnetron sputtered SiO2 films was investigated. The SiO2 films were characterized with the atomic force microscopy (AFM) for their surface topology. In addition, the electrical insulating strength of the magnetron sputtered SiO2 was examined.


2011 ◽  
Vol 22 (37) ◽  
pp. 375204 ◽  
Author(s):  
S Darbari ◽  
M Shahmohammadi ◽  
M Mortazavi ◽  
S Mohajerzadeh ◽  
Y Abdi ◽  
...  

2012 ◽  
Vol 11 (06) ◽  
pp. 1240035
Author(s):  
WANBING LU ◽  
SHAOGANG GUO ◽  
JIANTAO WANG ◽  
YUN LI ◽  
XINZHAN WANG ◽  
...  

Nanocrystalline silicon embedded in silicon oxide (nc- Si/SiO2 ) films have been in situ grown at a low substrate temperature of 300°C by reactive magnetron co-sputtering of Si and SiO2 targets in a mixed Ar/H2 discharge. The influences of H2 flow rate (F H ) on the microstructural properties of the deposited nc- Si/SiO2 films were investigated. The results of XRD and the deposition rate of nc- Si/SiO2 films show that the introduction of H2 contributes to the growth of nc- Si grains in silicon oxide matrix. With further increasing F H , the average size of nc- Si grains increases and the deposition rate of nc- Si/SiO2 films decreases gradually. Fourier transform infrared spectra analyses reveal that introduction of hydrogen contributes to the phase separation of nc- Si and SiO x in the deposited films. Moreover, the Si–O 4-n Si n(n = 0, 1) concentration of the deposited nc- Si/SiO2 films reduces with the increase of F H , while that of Si – O 4-n Si n(n = 2, 3) concentration increases. These results can be explained by that active hydrogen atoms increase the probability of reducing oxygen from precursor in the plasma and prompting oxygen desorption from the growing surface. This low-temperature procedure for preparing nc- Si/SiO2 films opens up the possibility of fabricating the silicon-based thin-film solar cells onto low-cost glass substrates using nc- Si/SiO2 films.


1994 ◽  
Vol 337 ◽  
Author(s):  
F. Edelman ◽  
R. Brener ◽  
C. Cytermann ◽  
M. Eizenberg ◽  
R. Weil ◽  
...  

Thin films of amorphous Si1−xGex:H with x=0, 0.3, 0.6, and 1 were deposited by RF glow discharge at 200-250°C on SnO2/glass substrates. The tin dioxide was reduced by heat treatment at the temperature range of 400-600°C resulting in a layered structure of silicon oxide, tin suboxide and ß-Sn which formed at the a-Si1−xGex:H/SnO2 interface. A strong dependence of the extent of the reduction on the Ge content in the a-Si1−xGex:H films was found: at low temperatures (T≤475°C) the Si-rich layers were more reactive, whereas at T≥475°C the Ge-rich films totally reduced the SnO2. The interfacial reduction process was followed by a drop in the transparency and drastic changes in the sheet resistance of the a-Si1−xGex:H/SnO2 contacts.PACS: 61.43.Dq; 78.66; 82.65.-i; 82.65.Fr; 82.65.Yh


Author(s):  
Oday A Hammadi

A new technique to extract nanoscale powders from thin films deposited by a physical vapor deposition method on nonmetallic substrates is proposed. Powders were extracted from films of different materials, such as silicon, nickel, copper, iron, aluminum and cobalt, and compounds, such as aluminum nitride, aluminum oxide, copper oxide, iron oxide, nickel cobaltite, nickel ferrite, nickel oxide, silicon carbide, silicon nitride and silicon oxide. These thin films were deposited on glass substrates by magnetron sputtering, pulsed-laser deposition, spray pyrolysis or thermal evaporation, and the particle sizes of the extracted powders were comparable to those of film samples. This technique is fast, low cost, reliable, highly clean and appropriate for large-scale samples.


Author(s):  
M. Raghavan ◽  
J. Y. Koo ◽  
J. W. Steeds ◽  
B. K. Park

X-ray microanalysis and Convergent Beam Electron Diffraction (CBD) studies were conducted to characterize the second phase particles in two commercial aluminum alloys -- 7075 and 7475. The second phase particles studied were large (approximately 2-5μm) constituent phases and relatively fine ( ∼ 0.05-1μn) dispersoid particles, Figures 1A and B. Based on the crystal structure and chemical composition analyses, the constituent phases found in these alloys were identified to be Al7Cu2Fe, (Al,Cu)6(Fe,Cu), α-Al12Fe3Si, Mg2Si, amorphous silicon oxide and the modified 6Fe compounds, in decreasing order of abundance. The results of quantitative X-ray microanalysis of all the constituent phases are listed in Table I. The data show that, in almost all the phases, partial substitution of alloying elements occurred resulting in small deviations from the published stoichiometric compositions of the binary and ternary compounds.


Author(s):  
James B. Pawley

Past: In 1960 Thornley published the first description of SEM studies carried out at low beam voltage (LVSEM, 1-5 kV). The aim was to reduce charging on insulators but increased contrast and difficulties with low beam current and frozen biological specimens were also noted. These disadvantages prevented widespread use of LVSEM except by a few enthusiasts such as Boyde. An exception was its use in connection with studies in which biological specimens were dissected in the SEM as this process destroyed the conducting films and produced charging unless LVSEM was used.In the 1980’s field emission (FE) SEM’s came into more common use. The high brightness and smaller energy spread characteristic of the FE-SEM’s greatly reduced the practical resolution penalty associated with LVSEM and the number of investigators taking advantage of the technique rapidly expanded; led by those studying semiconductors. In semiconductor research, the SEM is used to measure the line-width of the deposited metal conductors and of the features of the photo-resist used to form them. In addition, the SEM is used to measure the surface potentials of operating circuits with sub-micrometer resolution and on pico-second time scales. Because high beam voltages destroy semiconductors by injecting fixed charges into silicon oxide insulators, these studies must be performed using LVSEM where the beam does not penetrate so far.


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