Non-destructive depth profile reconstruction of single-layer graphene using angle-resolved X-ray photoelectron spectroscopy

2019 ◽  
Vol 491 ◽  
pp. 16-23 ◽  
Author(s):  
J. Zemek ◽  
J. Houdkova ◽  
P. Jiricek ◽  
T. Izak ◽  
M. Kalbac
Keyword(s):  
Depth Profile ◽  
Photoelectron Spectroscopy ◽  
Single Layer ◽  
Single Layer Graphene ◽  
X Ray ◽  
Layer Graphene ◽  
Profile Reconstruction ◽  
Non Destructive

scholarly journals In situ probing of the crystallization kinetics of rr-P3HT on single layer graphene as a function of temperature

2017 ◽  
Vol 19 (12) ◽  
pp. 8496-8503 ◽  
Author(s):  
Nicolas Boulanger ◽  
Victor Yu ◽  
Michael Hilke ◽  
Michael F. Toney ◽  
David R. Barbero
Keyword(s):  
Diffraction Analysis ◽  
Crystallization Kinetics ◽  
Single Layer ◽  
Single Layer Graphene ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Graphene ◽  
Kinetics Of

In situ X-ray diffraction analysis of P3HT films during cooling down on both Si and G.

Direct supramolecular interacted graphene oxide assembly on graphene as an active and defect-free functional platform

2017 ◽  
Vol 53 (12) ◽  
pp. 1949-1952 ◽  
Author(s):  
Peng Xiao ◽  
Nianxiang Qiu ◽  
Jincui Gu ◽  
Shuai Wang ◽  
Jiang He ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Microcontact Printing ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Stacking Interaction ◽  
Layer Graphene ◽  
Π Stacking ◽  
Π Stacking Interaction ◽  
Non Destructive

Graphene oxide (GO) is employed to have a non-destructive and selectively asymmetrical activation of single layer graphene via microcontact-printing induced π–π stacking interaction.

scholarly journals Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
E. C. Romani ◽  
D. G. Larrude ◽  
M. E. H. Maia da Costa ◽  
G. Mariotto ◽  
F. L. Freire
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Single Layer ◽  
Chemical Vapor ◽  
Single Layer Graphene ◽  
Pristine Graphene ◽  
Processing Temperature ◽  
Xps Spectra ◽  
Layer Graphene

We synthesized single-layer graphene from a liquid precursor (triisopropyl borate) using a chemical vapor deposition. Optical microscopy, scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy measurements were used for the characterization of the samples. We investigated the effects of the processing temperature and time, as well as the vapor pressure of the precursor. The B1s core-level XPS spectra revealed the presence of boron atoms incorporated into substitutional sites. This result, corroborated by the observed upshift of both G and 2D bands in the Raman spectra, suggests the p-doping of single-layer graphene for the samples prepared at 1000°C and pressures in the range of 75 to 25 mTorr of the precursor vapor. Our results show that, in optimum conditions for single-layer graphene growth, that is, 1000°C and 75 mTorr for 5 minutes, we obtained samples presenting the coexistence of pristine graphene with regions of boron-doped graphene.

scholarly journals Интеркаляционный синтез силицидов кобальта под графеном, выращенным на карбиде кремния

2020 ◽  
Vol 62 (3) ◽  
pp. 462
Author(s):  
Г.С. Гребенюк ◽  
И.А. Елисеев ◽  
С.П. Лебедев ◽  
Е.Ю. Лобанова ◽  
Д.А. Смирнов ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Photoelectron Spectroscopy ◽  
Single Layer ◽  
High Energy ◽  
Single Layer Graphene ◽  
High Energy Resolution ◽  
Kelvin Probe ◽  
Layer Graphene ◽  
Atomic Force ◽  
Cobalt Silicides

Abstract The process of formation of cobalt silicides near the graphene-silicon carbide interface by intercalation of single-layer graphene grown on the 4 H - and 6 H -SiC(0001) polytypes with cobalt and silicon is studied. The experiments were carried out in situ in ultrahigh vacuum. The analysis of the samples is performed by high-energy-resolution photoelectron spectroscopy using synchrotron radiation, low-energy electron diffraction, and also Raman spectroscopy, atomic-force and kelvin-probe microscopies. The thicknesses of the deposited cobalt and silicon layers is varied to 2 nm, and the sample temperature, from room temperature to 1000°C. Co and Si atoms deposited on heated samples is found to penetrate under graphene and are localized between the buffer layer and the substrate, which leads to a transformation of the buffer layer into additional graphene layer. It is shown that the result of intercalation of the system with cobalt and silicon is the formation under two-layer graphene of a Co–Si solid solution and silicide CoSi coated by the surface Co_3Si phase. It is shown that the thickness and the composition of the formed silicide films can be changed by varying the amount of the intercalated material and the order of their depositions.

Non-destructive depth profile evaluation of multi-layer thin film stack using simultaneous analysis of data from multiple X-ray photoelectron spectroscopy instruments

2022 ◽  
Author(s):  
Yutaka Hoshina ◽  
Kazuya Tokuda ◽  
Yoshihiro SAITO ◽  
Yugo Kubo ◽  
Junji Iihara
Keyword(s):  
Thin Film ◽  
Data Analysis ◽  
Depth Profile ◽  
Photoelectron Spectroscopy ◽  
Simultaneous Analysis ◽  
Analysis Tool ◽  
X Ray ◽  
Depth Profiles ◽  
Layer Thin Film ◽  
Non Destructive

Abstract Non-destructive depth profile evaluation of multi-layer thin film stacks using simultaneous analysis of angle-resolved x-ray photoelectron spectroscopy data from multiple instruments is demonstrated. The data analysis algorithm, called the maximum smoothness method, was originally designed to handle data from a single XPS instrument with a single x-ray energy; in this work, the algorithm is extended to provide a simultaneous analysis tool which can handle data from multiple instruments with multiple x-ray energies. The analysis provides depth profiles for multilayer stacks that cannot be obtained by conventional data analysis methods. In this paper, metal multi-layer stack samples with total thickness greater than 10 nm are analyzed with the maximum smoothness method to nondestructively obtain depth profiles, with precise information on the chemical states of atoms in the surface layer (< 2 nm) and the overall layer stack structure, which can only be obtained by analyzing the data from multiple instruments.

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