Effects of strain and surface modification on stability, electronic and optical properties of GaN monolayer

2019 ◽  
Vol 479 ◽  
pp. 475-481 ◽  
Author(s):  
Huabing Shu ◽  
XiangHong Niu ◽  
XiaoJin Ding ◽  
Ying Wang
Keyword(s):  
Optical Properties ◽  
Surface Modification ◽  
Electronic And Optical Properties

scholarly journals Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil

RSC Advances ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 2113-2122 ◽  
Author(s):  
Ch. Ramesh ◽  
P. Tyagi ◽  
J. Kaswan ◽  
B. S. Yadav ◽  
A. K. Shukla ◽  
...  
Keyword(s):  
Optical Properties ◽  
Surface Modification ◽  
Repetition Rate ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Metal Foil ◽  
Foil Surface ◽  
Laser Repetition Rate ◽  
Electronic And Optical Properties ◽  
Effect Of Surface

The effect of flexible Ti metal foil surface modification and laser repetition rate in laser molecular beam epitaxy growth process on the evolution of GaN nanorods and their structural, electronic and optical properties has been investigated.

Surface modification of TiO2 for visible light photocatalysis: Experimental and theoretical calculations of its electronic and optical properties

2019 ◽  
Vol 34 (01n03) ◽  
pp. 2040067 ◽  
Author(s):  
Dessy Ariyanti ◽  
Surayya Mukhtar ◽  
Nisar Ahmed ◽  
Zhuofeng Liu ◽  
Junzhe Dong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Photocatalytic Activity ◽  
Surface Modification ◽  
Visible Light ◽  
Visible Light Irradiation ◽  
Theoretical Calculations ◽  
Chemical Reduction ◽  
Light Irradiation ◽  
Full Potential ◽  
Electronic And Optical Properties

Surface modification has been used as a method to create defects on [Formula: see text] materials, which can improve their desirable properties. In this paper, defected [Formula: see text] nano-powder was successfully synthesized by chemical reduction using [Formula: see text] as the reducing agent at 300–400[Formula: see text] under argon atmosphere. High defect concentration can be produced by increasing process temperature. The modified [Formula: see text] shows good visible light absorption and photocatalytic activity on degradation of Rhodamine B (4–9 times higher than the pristine [Formula: see text]) with the visible light irradiation. Further XPS analysis and theoretical studies using full potential linearized augmented plane wave (FP-LAPW) method as implemented in wien2k code revealed the existence of oxygen vacancy and [Formula: see text] in the modified samples. These types of defects were responsible for the modifications of the electronic and optical properties of [Formula: see text], resulting in the improved photocatalytic activity in visible light irradiation.

ELECTRONIC AND OPTICAL PROPERTIES OF QUASIPERIODIC FIBONACCI SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-529-C5-532 ◽  
Author(s):  
F. LARUELLE ◽  
V. THIERRY-MIEG ◽  
M. C. JONCOUR ◽  
B. ETIENNE
Keyword(s):  
Optical Properties ◽  
Electronic And Optical Properties

First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN)n superlattices

2021 ◽  
Vol 67 (1 Jan-Feb) ◽  
pp. 7
Author(s):  
B. Bachir Bouiadjra ◽  
N. Mehnane ◽  
N. Oukli
Keyword(s):  
Optical Properties ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Scale Up ◽  
Energy Scale ◽  
First Principles Calculation ◽  
Full Potential ◽  
Electronic Band ◽  
Electronic And Optical Properties ◽  
Growth Axis

Based on the full potential linear muffin-tin orbitals (FPLMTO) calculation within density functional theory, we systematically investigate the electronic and optical properties of (100) and (110)-oriented (InN)/(GaN)n zinc-blende superlattice with one InN monolayer and with different numbers of GaN monolayers. Specifically, the electronic band structure calculations and their related features, like the absorption coefficient and refractive index of these systems are computed over a wide photon energy scale up to 20 eV. The effect of periodicity layer numbers n on the band gaps and the optical activity of (InN)/(GaN)n SLs in the both  growth axis (001) and (110) are examined and compared. Because of prospective optical aspects of (InN)/(GaN)n such as light-emitting applications, this theoretical study can help the experimental measurements.

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