Influence of thermal treatment temperature on high-performance varistors prepared by hot-dipping tin oxide thin films in Nb2O5 powder

2018 ◽  
Vol 443 ◽  
pp. 301-310 ◽  
Author(s):  
Qi Wang ◽  
Zhijian Peng ◽  
Yang Wang ◽  
Xiuli Fu
2007 ◽  
Vol 280-283 ◽  
pp. 831-834 ◽  
Author(s):  
Lan Zhao ◽  
Dao Li Zhang ◽  
Gang Du ◽  
Jian Mei Xu ◽  
Dong Xiang Zhou

Antimony-doped tin oxide thin films have a range of technical applications as conductive coatings, and sol-gel processing seems to offer some advantages over other coating techniques. In this study, the sol was prepared by sol-gel approach from SnO2·H2O and SbCl3 in alcohol. It was found that the heat-treatment temperature and doping level have strong influences on the microstructure and composition of Sb: SnO2 films. The SnO2 crystals exist mainly as tetragonal rutile structure. The optimum heat-treatment temperature is about 450 ~ 500°C, and the film is composed with nanocrystals and nano-pores. Microstructure and the electrical behaviors of Sb-doped SnO2 thin films derived by sol-gel process were investigated.


2013 ◽  
Vol 275-277 ◽  
pp. 1941-1945
Author(s):  
Gen Zong Song ◽  
Duo Zhang

ZnO is a novel kind of semiconductor material, which has hexagonal Wurtzite crystal structure, with a wide band-gap of 3.37eV at room temperature. It owns a large excitation binding energy of 60meV and excellent room temperature stability. ZnO has very useful properties of piezoelectricity, gas & pressure sensitivity etc. Therefore, application researches on low dimensional ZnO materials have become hot topics and significant values.In this paper, ZnO doped thin films were prepared by sol-gel method. Zn (CH3COO)2•2H2O was employed as the precursor, anhydrous alcohol was the solvent, monoethanolamine was the complexant, Co(CH3COO)2•4H2O was used as the source of the Co-dopant, Al(NO3)3•9H2O was used as the source of the Al-dopant in the experiment to yield the doped ZnO films. The sample preparation spin coating number is 6, the average grain size is in nanometer level, and the thermal treatment temperature is 450, 500, 550, 600°C, respectively. The effect of the doping proportion on the crystallization and energy band structure of the ZnO thin films were characterized by X-ray diffraction (XRD), the Infrared spectrum and the ultraviolet-visible transmission spectra (UV-Vis).The results show that the crystalline grain size of the ZnO doped films grown on glass substrates increases, since the thermal treatment temperature rise. In this paper, a best ZnO doped film was obtained at the temperature of 600°C. It preliminarily analyses that Co-doped ZnO films present a absorption peak in infrared area when the thermal treatment is at 550°C. Al or Co doped ZnO films can cause a redshift of ultraviolet absorption peaks. Energy gap is around 3.2eV when doped. The ultraviolet absorption peaks of Al-doped ZnO films will have a shift to high energy, since it has a better crystallinity.


2015 ◽  
Vol 118 (2) ◽  
pp. 025304 ◽  
Author(s):  
Qichao Li ◽  
Wenfeng Mao ◽  
Yawei Zhou ◽  
Chunhong Yang ◽  
Yong Liu ◽  
...  

2021 ◽  
pp. 138731
Author(s):  
Bert Scheffel ◽  
Olaf Zywitzki ◽  
Thomas Preußner ◽  
Torsten Kopte

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