Structural, optical and electrical properties of copper antimony sulfide thin films grown by a citrate-assisted single chemical bath deposition

2018 ◽  
Vol 427 ◽  
pp. 1099-1106 ◽  
Author(s):  
F.E. Loranca-Ramos ◽  
C.J. Diliegros-Godines ◽  
R. Silva González ◽  
Mou Pal
2019 ◽  
pp. 1-6
Author(s):  
Nabile Edith Rodríguez-García ◽  
Felipe Adrián Vázquez-Gálvez ◽  
Fernando Estrada-Saldaña ◽  
Israel Hernández-Hernández

Antimony Sulfide (Sb2S3) thin films were prepared using the laser assisted chemical bath deposition technique. The precursors used in the chemical bath were antimony chloride and sodium thiosulfate, the deposit was made at room temperature on glass substrate, while it was irradiated with a wavelength of 532 nm of the pulsed Nd:YAG laser. In this work, we studied the effects of energy density (1.97 x 107 and 7.07 x 106 W/cm2) and the irradiation time (30, 45 and 60 min) during the deposition process on the structure and the optical and electrical properties of the antimony sulfide films. The structure, composition, and optical and electrical properties were analyzed by X-Ray Diffraction (XRD), Raman Spectroscopy and X-Ray Emitted Photoelectron Spectroscopy (XPS), UV-Vis spectroscopy and photoconductivity. The results showed that the laser assisted chemical deposition technique is an effective synthesis technique for obtaining thin films of antimony sulfide for optoelectronic applications or in solar cells.


2017 ◽  
Vol 35 (2) ◽  
pp. 329-334 ◽  
Author(s):  
V. Balasubramanian ◽  
P. Naresh Kumar ◽  
D. Sengottaiyan

Abstract The effect of deposition temperature on the structural, optical and electrical properties of copper bismuth sulphide (CuBiS2) thin films deposited by chemical bath deposition onto glass substrates at different deposition temperatures (40 °C, 50 °C, 60 °C and 70 °C) for 5 hours deposition time period was investigated. The obtained films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX) and optical absorption spectra. All deposited films were polycrystalline and had an orthorhombic structure. Their grain size had changed with deposition temperature and their compositions were nearly stoichiometric. The optical band gap value was decreased from 2.44 eV to 2.33 eV with increasing the film thickness. Electrical parameters such as mobility and type of electrical conduction were determined from the Hall effect measurements. They showed that the obtained films have n-type conductivity and mobility values of the copper bismuth sulphide (CuBiS2) films have changed with deposition temperature.


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