Analysis of arrayed nanocapacitor formed on nanorods by flow-rate interruption atomic layer deposition

2017 ◽  
Vol 426 ◽  
pp. 224-228 ◽  
Author(s):  
Bo-Cheng Lin ◽  
Ching-Shun Ku ◽  
Hsin-Yi Lee ◽  
Subhendu Chakroborty ◽  
Albert T. Wu
Keyword(s):  
Atomic Layer Deposition ◽  
Flow Rate ◽  
Atomic Layer ◽  
Layer Deposition

Suppression of substrate oxidation during ozone based atomic layer deposition of Al2O3: Effect of ozone flow rate

2010 ◽  
Vol 97 (16) ◽  
pp. 162903 ◽  
Author(s):  
Jinhee Kwon ◽  
Min Dai ◽  
Mathew D. Halls ◽  
Yves. J. Chabal
Keyword(s):  
Atomic Layer Deposition ◽  
Flow Rate ◽  
Atomic Layer ◽  
Substrate Oxidation ◽  
Layer Deposition

Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films

2006 ◽  
Vol 252 (16) ◽  
pp. 5723-5734 ◽  
Author(s):  
Jaan Aarik ◽  
Aleks Aidla ◽  
Aarne Kasikov ◽  
Hugo Mändar ◽  
Raul Rammula ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Flow Rate ◽  
Atomic Layer ◽  
Gas Pressure ◽  
Carrier Gas ◽  
Layer Deposition

Plasma-Enhanced Atomic Layer Deposition of GaN Thin Film at Low Temperature

2017 ◽  
Vol 727 ◽  
pp. 907-914
Author(s):  
Wen Hui Tang ◽  
Yi Jia ◽  
Bo Cheng Zhang ◽  
Chang Wei Yang ◽  
You Zhi Qu ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Flow Rate ◽  
Nitrogen Sources ◽  
Atomic Layer ◽  
Gas Mixture ◽  
X Ray ◽  
Layer Deposition

Polycrystalline GaN thin films were successfully grown at low temperature (250 °C) by plasma-enhanced atomic layer deposition with NH3, N2, N2/H2 gas mixture and trimethylgallium (TMG) as precusor. The growth rate, crystal structure, surface composition and the valence state of the corresponding element of the GaN thin films using different nitrogen sources were characterized and examined systematically via the spectroscopic ellipsometry, the x-ray diffractometer, the x-ray photoel-ectron spectrometer. It is showed that all the GaN thin films using different nitrogen sources were polycrystalline structure and the preffered orientation were mainly (100). The films using N2 and N2/H2 gas mixture had a higher crystal quality than films using NH3. The GPC (growth rate per cycle) would increase with the increase of the N2 flow rate. The films using a suitable ratio of N2/H2 flow rate had not only a high GPC but a good crystal quality. The ratios of Ga/N element of the films using N2/H2 gas mixture were approximated to 1:1, it would increase with the ratio of the N2/H2 flow rate in the gas mixture, which is showing much effect of the ratios of N2/H2 flow rate on the nitrogen content of the thin films.

Investigating the Purge Flow Rate in a Reactor Scale Simulation of an Atomic Layer Deposition Process

2019 ◽  
Author(s):  
Emeka Charles Nwanna ◽  
Rigardt Alfred Maarten Coetzee ◽  
Tien-Chien Jen
Keyword(s):  
Atomic Layer Deposition ◽  
Deposition Rate ◽  
Flow Rate ◽  
Atomic Layer ◽  
Deposition Process ◽  
Ozone Exposure ◽  
Essential Property ◽  
Operating Pressure ◽  
Layer Deposition ◽  
Purge Flow

Abstract This paper investigates the purge flow rate in a reactor scale simulation of an Atomic Layer Deposition (ALD) process. A three-dimensional numerical analysis approach was implemented in the ALD process to fabricate thin films of aluminium oxide (Al2O3). Despite the abundance of literature on the specific use of, and increase in deposited material through the process of ALD, limited studies exist on the physical and chemical processes that occur during the growth of ALD. Previous literature has indicated that purging has presented a major challenge in the effective deposition rate of the ALD process. The precise purge flow rate has also been greatly contended. The importance of the purge sequence within the ALD process cannot be overemphasized. The term purge sequence refers to the essential property that defines the ALD advanced nano-fabrication technique in producing ultra-thin film. Therefore, this study focused on the purge flow rate effects of the ALD process. The reactants employed in the simulation process were trimethyl-aluminium (TMA) and ozone (O3) as the metal and oxidant precursors, respectively, and inert argon as the purge gas. Numerical simulations were carried out at a stable operating pressure of 1 torr, with a substrate temperature of 200°C, and three purge flow rates of 20, 10 and 5 sccm, respectively. An extended ozone exposure is crucial to in providing an adequately oxidized substrate. It is discovered that the 5 sccm flow rate shows, superior mass fractions, unity surface coverage and a time extensive surface deposition rate. The 20 sccm, 10 sccm and 5 sccm purge flow rate growth obtained a 0.58, 0.92, and 1.6 Å/cycle, respectively. The findings revealed close similarities to experimental behaviours and recorded growth.

Growth of high-quality epitaxial ZnO films on (10–10) sapphire by atomic layer deposition with flow-rate interruption method

2013 ◽  
Vol 231 ◽  
pp. 323-327 ◽  
Author(s):  
Jheng-Ming Huang ◽  
Ching-Shun Ku ◽  
Hsin-Yi Lee ◽  
Chih-Ming Lin ◽  
San-Yuan Chen
Keyword(s):  
Atomic Layer Deposition ◽  
Flow Rate ◽  
Atomic Layer ◽  
Zno Films ◽  
High Quality ◽  
Layer Deposition

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

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