Efficient photocatalytic degradation of perfluorooctanoic acid by a wide band gap p -block metal oxyhydroxide InOOH

2017 ◽  
Vol 416 ◽  
pp. 587-592 ◽  
Author(s):  
Jingjing Xu ◽  
Miaomiao Wu ◽  
Jingwen Yang ◽  
Zhengmei Wang ◽  
Mindong Chen ◽  
...  
2020 ◽  
Vol 32 (7) ◽  
pp. 1642-1648
Author(s):  
P.S. Patil ◽  
A.N. Kulkarni ◽  
S.D. Khairnar ◽  
M.G. R aghuwanshi

Optical properties including band gap of many wide band gap semiconductor oxides like TiO2, ZnO and SnO2 has limitations over their bare use in photocatalytic applications. Thus, in view of above, tungsten oxide (WO3), an intermediate band gap metal oxide has been selected to explore for photocatalytic degradation application. Present work deals with the preparation of WO3 using a simple chemical solution based spin coating method. The prepared sample has been characterized for structural, morphological and photocatalytic properties. Degradation experiment of dye was carried out systematically at the optimized conditions of pH 4 and contact time (120 min) between dye and catalyst. For optimized conditions, WO3 showed about 75% of degradation of rhodamine-B. This suggests that a huge scope to optimize preparative parameters for WO3 to explore it as an alternative to conventional metal oxides.


2019 ◽  
Vol 3 (3) ◽  
pp. 437-449 ◽  
Author(s):  
Anuraj S. Kshirsagar ◽  
Pawan K. Khanna

A novel nano-hybrid using a small-band-gap CuSbSe2 and wide-band-gap TiO2 is formed via microwave and thermal methods for efficient photocatalytic degradation of organic dyes.


Author(s):  
Joanna L. Batstone

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.


Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  

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