Novel electronic properties of a new MoS 2 /TiO 2 heterostructure and potential applications in solar cells and photocatalysis

2017 ◽  
Vol 414 ◽  
pp. 34-40 ◽  
Author(s):  
Yanhua Li ◽  
Congzhong Cai ◽  
Yonghong Gu ◽  
Wende Cheng ◽  
Wen Xiong ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electronic Properties ◽  
Potential Applications

scholarly journals Advances in Synthesis of π-Extended Benzosilole Derivatives and Their Analogs

Molecules ◽  
2020 ◽  
Vol 25 (3) ◽  
pp. 548
Author(s):  
Tuan Thanh Dang ◽  
Hue Minh Thi Nguyen ◽  
Hien Nguyen ◽  
Tran Ngoc Dung ◽  
Minh Tho Nguyen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Physical Properties ◽  
Electronic Materials ◽  
Advanced Materials ◽  
Potential Applications

Benzosiloles and their π-extended derivatives are present in many important advanced materials due to their excellent physical properties. Especially, they have found many potential applications in the development of novel electronic materials such as OLEDs, semiconductors and solar cells. In this review, we have summarized several main approaches to construct (di)benzosilole derivatives and (benzo)siloles fused to aromatic five- and six-membered heterocycles.

Unveiling the effects of post-deposition treatment with different alkaline elements on the electronic properties of CIGS thin film solar cells

2014 ◽  
Vol 16 (19) ◽  
pp. 8843 ◽  
Author(s):  
Fabian Pianezzi ◽  
Patrick Reinhard ◽  
Adrian Chirilă ◽  
Benjamin Bissig ◽  
Shiro Nishiwaki ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electronic Properties ◽  
Thin Film Solar Cells ◽  
Cigs Thin Film ◽  
Post Deposition

scholarly journals First-Principles Study on the Stabilities, Electronic and Optical Properties of GexSn1-xSe Alloys

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 876 ◽  
Author(s):  
Qi Qian ◽  
Lei Peng ◽  
Yu Cui ◽  
Liping Sun ◽  
Jinyan Du ◽  
...  
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Band Gap ◽  
Electronic Properties ◽  
First Principles ◽  
Future Application ◽  
First Principles Calculations ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
The Future

We systematically study, by using first-principles calculations, stabilities, electronic properties, and optical properties of GexSn1-xSe alloy made of SnSe and GeSe monolayers with different Ge concentrations x = 0.0, 0.25, 0.5, 0.75, and 1.0. Our results show that the critical solubility temperature of the alloy is around 580 K. With the increase of Ge concentration, band gap of the alloy increases nonlinearly and ranges from 0.92 to 1.13 eV at the PBE level and 1.39 to 1.59 eV at the HSE06 level. When the Ge concentration x is more than 0.5, the alloy changes into a direct bandgap semiconductor; the band gap ranges from 1.06 to 1.13 eV at the PBE level and 1.50 to 1.59 eV at the HSE06 level, which falls within the range of the optimum band gap for solar cells. Further optical calculations verify that, through alloying, the optical properties can be improved by subtle controlling the compositions. Since GexSn1-xSe alloys with different compositions have been successfully fabricated in experiments, we hope these insights will contribute to the future application in optoelectronics.

scholarly journals Post-Annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoOX Thin Films as Hole-Selective Contacts for p-Si Solar Cells

2021 ◽  
Author(s):  
Yuanwei Jiang ◽  
Shuangying Cao ◽  
Linfeng Lu ◽  
Guanlin Du ◽  
Yinyue Lin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Work Function ◽  
Electronic Properties ◽  
Crystalline Silicon ◽  
Annealing Treatment ◽  
Crystalline Silicon Solar Cells ◽  
Post Annealing ◽  
Si Solar Cells ◽  
Optical And Electronic Properties ◽  
Large Work

Abstract Owing to its large work function, MoOX has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoOX films are employed on the rear sides of p-type crystalline silicon (p-Si) solar cells, where the optical and electronic properties of the MoOX films as well as the corresponding device performances are investigated as a function of post-annealing treatment. The MoOX film annealed at 100oC shows the highest work function and proves the best hole selectivity based on the results of energy band simulation and contact resistivity measurements. The full rear p-Si/MoOX/Ag contacted solar cells demonstrate the best performance with an efficiency of 19.19%, which is the result of the combined influence of MoOX’s hole selectivity and passivation ability.

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