Fabrication of Ag/ZnO heterostructure and the role of surface coverage of ZnO microrods by Ag nanoparticles on the photophysical and photocatalytic properties of the metal-semiconductor system

2017 ◽  
Vol 410 ◽  
pp. 557-565 ◽  
Author(s):  
Bikash Sarma ◽  
Bimal K. Sarma
RSC Advances ◽  
2015 ◽  
Vol 5 (61) ◽  
pp. 49671-49679 ◽  
Author(s):  
Prem. C. Pandey ◽  
Richa Singh ◽  
Yashashwa Pandey

A facile method for the synthesis of functional AgNPs and bimetallic Ag–Au/Au–Ag are reported, enabling the formation of nanocomposite with prussian blue in a crystalline framework for bioanalytical applications, showing the active role of organic reducing agents and 3-aminopropyltrimethoxysilane.


2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Kaijun Zhou ◽  
Yi Hu ◽  
Luqing Zhang ◽  
Kun Yang ◽  
Daohui Lin

2021 ◽  
Vol 15 (04) ◽  
Author(s):  
Fucheng Yu ◽  
Bolong Wang ◽  
Junpeng Cui ◽  
Dongmei Nan ◽  
Yuanmeng Li ◽  
...  

2016 ◽  
Vol 69 ◽  
pp. 131-138 ◽  
Author(s):  
Rajeev Kumar ◽  
M.Sh. Abdel-Wahab ◽  
M.A. Barakat ◽  
Jamshaid Rashid ◽  
Numan Salah ◽  
...  

1989 ◽  
Vol 149 ◽  
Author(s):  
S. Veprek ◽  
M. Heintze ◽  
R. Bayer ◽  
N. Jurčik-Rajman

ABSTRACTWe present new results of kinetic studies of the deposition of high quality a-Si:H which strongly support the reaction mechanism suggested in our earlier papers: 1. SiH4 → SiH2; 2. SiH2 + SiS4 → Si2H6 (SiH2 + Si2H6 → Si3H6); 3. Si2H6 → 2a-Si:H (Si3H8 → 3a-Si:H). The “SiH3 mechanism”, as promoted by several workers, is in contradiction with these experimental facts.The di- and trisilane, which have a much higher reactive sticking coefficient than monosilane, play the role of reactive intermediates which facilitate the heterogeneous decomposition of silicon carrying species at the surface of the growing film. The values of the reactive sticking coefficient of Si2H6 and Si3H8 depend on the surface coverage by chemisorbed hydrogen; they increase with decreasing surface coverage. Under the conditions of the growth of high quality a-Si:H films the reactive sticking coefficient of disilane amounts to 10−4 to 10−2 which is in a good agreement with recent data of other authors.The rate determining step of the growth of high quality a-Si:H films is the desorption of hydrogen from the surface of the growing film. This can be strongly enhanced by ion bombardment at impact energy of <100 eV. In this way, homogeneous, good quality films were deposited at rates up to 1800 Angströms/min, and there is a well justified hope that this rate can be further increased.


2021 ◽  
Vol 50 (1) ◽  
pp. 208-216
Author(s):  
Mengnan Yang ◽  
Zhaoli Yan ◽  
Tiantian Li ◽  
Bing Liu ◽  
Qiangshan Jing ◽  
...  

Negatively charged surface hydroxyls and micropores of Janus silica nanosheets play a particular role in the highly efficient and dispersed assembly of ultra-small Ag nanoparticles with high catalytic activity.


2015 ◽  
Vol 39 (5) ◽  
pp. 3948-3955 ◽  
Author(s):  
Sahar Zinatloo-Ajabshir ◽  
Masoud Salavati-Niasari

Triethylenetetramine with high hindrance in the presence of PEG plays a role of a co-capping agent for the Pr(OH)3 nanoparticles.


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