Laser printed organic semiconductor PQT-12 for bottom-gate organic thin-film transistors: Fabrication and characterization

2016 ◽  
Vol 390 ◽  
pp. 823-830 ◽  
Author(s):  
M. Makrygianni ◽  
A. Ainsebaa ◽  
M. Nagel ◽  
S. Sanaur ◽  
Y.S. Raptis ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductor ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Fabrication And Characterization ◽  
Bottom Gate

Pentacene Organic Thin-Film Transistors with Dual-Gate Structure

2007 ◽  
Vol 124-126 ◽  
pp. 383-386
Author(s):  
Jae Bon Koo ◽  
Jung Wook Lim ◽  
Chan Hoe Ku ◽  
Sang Chul Lim ◽  
Jung Hun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrostatic Potential ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Gate Structure ◽  
Dual Gate ◽  
Bottom Gate

We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited (PEALD) 150 nm thick Al2O3 as a bottom gate dielectric and a 300 nm thick parylene or a PEALD 200 nm thick Al2O3 as both a top gate dielectric and a passivation layer. The threshold voltage (Vth) of OTFT with a 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with a PEALD 200 nm thick Al2O3 as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of Vth of OTFT with the dual-gate structure has been successfully understood by an analysis of electrostatic potential.

Improving the electrical performance of PDI8-CN2 bottom-gate coplanar organic thin-film transistors

2018 ◽  
Vol 124 (10) ◽  
Author(s):  
Loredana Parlato ◽  
Ettore Sarnelli ◽  
Antonio Cassinese ◽  
Federico Chianese ◽  
Fabio Chiarella ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Organic Thin Film ◽  
Bottom Gate

Bottom Contact Ambipolar Organic Thin Film Transistors Based on C60/Pentacene Heterostructure

2006 ◽  
Vol 965 ◽  
Author(s):  
Kaname Kanai ◽  
Suidong Wang ◽  
Kazuhiko Seki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
High Electron ◽  
Organic Thin Film ◽  
Bottom Contact ◽  
Transfer Characteristics ◽  
Fabrication And Characterization ◽  
Ambipolar Transport

ABSTRACTWe report the fabrication and characterization of the bottom contact organic thin film transistors and inverter based on a heterostructure of C60 on pentacene. The transistor shows ambipolar transport characteristics with high electron and hole mobilities of 0.23 cm2V−1s−1 and 0.14 cm2V−1s−1, respectively. After exposure to air, the n-channel in C60 is completely degraded whereas the p-channel in pentacene keeps working. Both the n-channel and the p-channel are stable in N2 atmosphere. The inverter exhibits typical transfer characteristics, which are interpreted by the distribution of the accumulated electrons and holes depending on the bias conditions. These results suggest a potential way to fabricate organic complementary circuits with a single organic heterostructure device.

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