Zirconium doped TiO2 thin films deposited by chemical spray pyrolysis

2016 ◽  
Vol 387 ◽  
pp. 539-545 ◽  
Author(s):  
A. Juma ◽  
I. Oja Acik ◽  
A.T. Oluwabi ◽  
A. Mere ◽  
V. Mikli ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Chemical Spray Pyrolysis ◽  
Tio2 Thin Films ◽  
Doped Tio2 ◽  
Chemical Spray

scholarly journals Effects of Mn doping on the characterization of nanostructured TiO2 thin films deposited via chemical spray pyrolysis method

2020 ◽  
Vol 1664 ◽  
pp. 012069
Author(s):  
Esraa H Hadi ◽  
Mustafa A Abbsa ◽  
Abdulhussain A Khadayeir ◽  
Ziad M Abood ◽  
Nadir F Habubi ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Method ◽  
Chemical Spray Pyrolysis ◽  
Tio2 Thin Films ◽  
Nanostructured Tio2 ◽  
Mn Doping ◽  
Pyrolysis Method ◽  
Chemical Spray

scholarly journals Influence of Ag-Dopant on Structural Optical and Electrical Properties of Cu(1-x)AgxO Thin Films Prepared By Chemical Spray Pyrolysis Technique

2018 ◽  
Vol 4 (5) ◽  
pp. 542-545 ◽  
Author(s):  
R. Shabu ◽  
A. Moses Ezhil Raj
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Optical Band Gap ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Oxide Semiconductor ◽  
Chemical Spray Pyrolysis ◽  
Chemical Spray Pyrolysis Technique ◽  
Chemical Spray

As major attention has been paid to transition metal oxide semiconductor suitable for solar cell, photo detector and gas sensor, present study embark on the structural, optical and electrical characterization of Ag doped CuO thin films prepared using chemical spray pyrolysis technique at the constant substrate temperature of 350 �C. For Ag doping, various concentrations of silver acetate (0.5-3.0 wt.%) was used in the sprayed precursor solution. Confirmed monoclinic lattice shows the tenorite phase formation of CuO in the pure and Ag doped films. The optical band gap of the films was in the range of 2.4 -3.4 eV. A minimum resistivity of 0.0017x103 ohmcm was achieved in the 0.5 wt.% Ag doped film, and its optical band gap was 2.74 eV.

Optoelectronic Properties of Fluorine and Cobalt Co-Doped Tin Oxide Thin Films Deposited by Chemical Spray Pyrolysis

2019 ◽  
Vol 60 ◽  
pp. 63-75 ◽  
Author(s):  
Naoual Houaidji ◽  
Mejda Ajili ◽  
Baghdadi Chouial ◽  
Najoua Turki Kamoun ◽  
Kenza Kamli ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Carrier Concentration ◽  
Tin Oxide ◽  
Hall Mobility ◽  
Spray Pyrolysis Method ◽  
Chemical Spray Pyrolysis ◽  
Glass Substrates ◽  
Chemical Spray ◽  
Co Doped

Transparent conducting Cobalt-fluorine co-doped tin oxide (SnO2: (Co, F)) thin filmswere deposited onto preheated glass substrates using the chemical spray pyrolysis method. The ([Co2+]/[Sn4+]) atomic concentration ratio (y)in the spray solution was varied between 0 and 5 at. %. The structural, electrical, optical and photoluminescence properties of these films were studied. It is found that the thin films are polycrystalline with a tetragonal crystal structure corresponding to SnO2 phase having a preferred orientation along the (200) plane. Transmission and reflection spectra reveal the presence of interference fringes indicating thickness uniformity and surface homogeneity of the deposited thin films. The electrical resistivity (ρ), volume carrier concentration density (Nv), surface carrier concentration density (Ns) and Hall mobility (μ) of the synthesized thin films were determined from the Hall Effect measurements in the Van der Paw-configuration and the following results were obtained: n-type conductivity in all deposited films, a low resistivity of 1.16×10-2 Ω.cm, and a high Hall mobility of 15.13×102 cm2.V-1.s-1with Co concentration equals to 3 at. %. These results show that the electrical properties of these thin films where greatly improved making them suitable as ohmic contact in photovoltaic application devices.

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