Improving the work function of the niobium surface of SRF cavities by plasma processing

Chemical reactions at a surface will in most cases show a measurable influence on the work function of the clean surface. This change of the work function δφ can be used to image the local distributions of the investigated reaction,.if one of the reacting partners is adsorbed at the surface in form of islands of sufficient size (Δ>0.2μm). These can than be visualized via a photoemission electron microscope (PEEM). Changes of φ as low as 2 meV give already a change in the total intensity of a PEEM picture. To achieve reasonable contrast for an image several 10 meV of δφ are needed. Dynamic processes as surface diffusion of CO or O on single crystal surfaces as well as reaction / diffusion fronts have been observed in real time and space.

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Microstructural characterization of plasma-processed Ti-Al metal matrix composites

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154731 ◽

1989 ◽

Vol 47 ◽

pp. 552-553

Author(s):

M. G. Burke ◽

M. N. Gungor ◽

M. A. Burke

Keyword(s):

High Temperature ◽

Titanium Aluminide ◽

Plasma Processing ◽

Microstructural Characterization ◽

High Temperature Strength ◽

Matrix Composites ◽

Intermetallic Matrix ◽

Long Time ◽

Strength And Stiffness ◽

Intermetallic Matrix Composites

Intermetallic matrix composites are candidates for ultrahigh temperature service when light weight and high temperature strength and stiffness are required. Recent efforts to produce intermetallic matrix composites have focused on the titanium aluminide (TiAl) system with various ceramic reinforcements. In order to optimize the composition and processing of these composites it is necessary to evaluate the range of structures that can be produced in these materials and to identify the characteristics of the optimum structures. Normally, TiAl materials are difficult to process and, thus, examination of a suitable range of structures would not be feasible. However, plasma processing offers a novel method for producing composites from difficult to process component materials. By melting one or more of the component materials in a plasma and controlling deposition onto a cooled substrate, a range of structures can be produced and the method is highly suited to examining experimental composite systems. Moreover, because plasma processing involves rapid melting and very rapid cooling can be induced in the deposited composite, it is expected that processing method can avoid some of the problems, such as interfacial degradation, that are associated with the relatively long time, high temperature exposures that are induced by conventional processing methods.

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Epitaxial ferroelectric thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170591 ◽

1994 ◽

Vol 52 ◽

pp. 572-573

Author(s):

S. G. Ghonge ◽

E. Goo ◽

R. Ramesh ◽

R. Haakenaasen ◽

D. K. Fork

Keyword(s):

Single Crystal ◽

Work Function ◽

Nonvolatile Memory ◽

Ferroelectric Properties ◽

Electrical Contact ◽

Memory Devices ◽

Ferroelectric Films ◽

Si Substrates ◽

Electro Optic ◽

Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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