The passive oxide films growth on 316L stainless steel in borate buffer solution measured by real-time spectroscopic ellipsometry

2015 ◽  
Vol 351 ◽  
pp. 367-373 ◽  
Author(s):  
Haisong Xu ◽  
Lu Wang ◽  
Dongbai Sun ◽  
Hongying Yu
2010 ◽  
Vol 156-157 ◽  
pp. 646-649 ◽  
Author(s):  
Hong Hua Ge ◽  
Jing Shen ◽  
Fei Song ◽  
Li Zhao ◽  
Guo Ding Zhou

The semiconducting behavior of passive film formed on 316L stainless steel in borate buffer solution containing sulfide was studied by capacitance measurements. The results indicate p-type semiconducting behavior related to chromium oxide of the passive film at -1.12 ~ -0.78V and n-type semiconducting behavior to iron oxide at -0.47 ~ +0.35V, with an acceptor density 11.21020 cm-3 and a donor density 7.501020 cm-3 respectively. The existence of sulfide in the solution obviously increases the acceptor densities which reaches to 215.61020 cm-3 with the sulfide concentration of 12 mgL1, and therefore have a more conductive behavior.


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