Tailoring out-of-plane magnetic properties of pulsed laser deposited FePt thin films by changing laser energy fluence

2014 ◽  
Vol 315 ◽  
pp. 37-44 ◽  
Author(s):  
Ying Wang ◽  
T.L. Tan ◽  
K.S. Tan ◽  
P. Lee ◽  
Hai Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Energy Fluence ◽  
Out Of Plane ◽  
Fept Thin Films

scholarly journals A Controllability Investigation of Magnetic Properties for FePt Alloy Nanocomposite Thin Films

Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 53
Author(s):  
Jian Yu ◽  
Tingting Xiao ◽  
Xuemin Wang ◽  
Xiuwen Zhou ◽  
Xinming Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Energy Density ◽  
Magnetic Phase ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Energy Density ◽  
Soft Magnetic ◽  
Fept Alloy ◽  
Nanocomposite Thin Films

An appropriate writing field is very important for magnetic storage application of L10 FePt nanocomposite thin films. However, the applications of pure L10 FePt are limited due to its large coercivity. In this paper, the ratios of L10 and non-L10 phase FePt alloy nanoparticles in FePt/MgO (100) nanocomposite thin films were successfully tuned by pulsed laser deposition method. By adjusting the pulsed laser energy density from 3 to 7 J/cm2, the ordering parameter initially increased, and then decreased. The highest ordering parameter of 0.9 was obtained at the pulsed laser energy density of 5 J/cm2. At this maximum value, the sample had the least amount of the soft magnetic phase of almost 0%, as analyzed by a magnetic susceptibility study. The saturation magnetization decreased with the increase in the content of soft magnetic phase. Therefore, the magnetic properties of FePt nanocomposite thin films can be controlled, which would be beneficial for the magnetic applications of these thin films.

Anisotropic magnetic properties of Zn1–xCoxO thin films grown by pulsed laser deposition

2006 ◽  
Vol 3 (4) ◽  
pp. 1126-1129
Author(s):  
J. W. Lee ◽  
S. Kuroda ◽  
S. Yamada ◽  
K. Takita
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

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