High precision patterning of ITO using femtosecond laser annealing process

2014 ◽  
Vol 314 ◽  
pp. 215-220 ◽  
Author(s):  
Chung-Wei Cheng ◽  
Cen-Ying Lin
2014 ◽  
Vol 43 (4) ◽  
pp. 414003
Author(s):  
王锋 WANG Feng ◽  
罗建军 LUO Jian-jun ◽  
李明 LI Ming

2019 ◽  
Vol 97 ◽  
pp. 62-66 ◽  
Author(s):  
S. Rascunà ◽  
P. Badalà ◽  
C. Tringali ◽  
C. Bongiorno ◽  
E. Smecca ◽  
...  

1982 ◽  
Vol 13 ◽  
Author(s):  
R. J. Nemanich ◽  
D. K. Biegelsen ◽  
W. G. Hawkins

ABSTRACTAligned, coexisting liquid and solid regions are observed in cw laser annealing of polycrystalline Si films on quartz substrates. These stripe patterns are the precursors of surface topography that exists after cooling. It is proposed that a similar situation exists in the pulse annealing process. A calculation of the temperature evolution which assumes stripe symmetry and kinetic restraints of the crystallization process has been carried out. These calculations indicate a lattice temperature of between 1100 and 1300 K, 10 nsec after the sample has fully solidified.


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