Effect of rapid thermal annealing on the compositional ratio and interface of Cu(In,Ga)Se2 solar cells by XPS

2013 ◽  
Vol 264 ◽  
pp. 459-463 ◽  
Author(s):  
D.S. Chen ◽  
J. Yang ◽  
F. Xu ◽  
P.H. Zhou ◽  
H.W. Du ◽  
...  
Keyword(s):  
Solar Cells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

scholarly journals Fabrication of flexible perovskite solar cells via rapid thermal annealing

2020 ◽  
Vol 276 ◽  
pp. 128215 ◽  
Author(s):  
Blake Martin ◽  
Mengjin Yang ◽  
Rosemary C. Bramante ◽  
Eric Amerling ◽  
Gautam Gupta ◽  
...  
Keyword(s):  
Solar Cells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Perovskite Solar Cells

Improvement of band gap profile in Cu(InGa)Se2 solar cells through rapid thermal annealing

2014 ◽  
Vol 54 ◽  
pp. 48-53 ◽  
Author(s):  
D.S. Chen ◽  
J. Yang ◽  
Z.B. Yang ◽  
F. Xu ◽  
H.W. Du ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Characterization of Cuprous Oxide Thin Films for Application in Solar Cells

2019 ◽  
Vol 22 ◽  
pp. 65-73
Author(s):  
Ørnulf Nordseth ◽  
Irinela Chilibon ◽  
Bengt Gunnar Svensson ◽  
Raj Kumar ◽  
Sean Erik Foss ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Cuprous Oxide ◽  
Wavelength Region ◽  
Morphological Properties ◽  
Optical Absorption Coefficient ◽  
Sputter Deposited ◽  
Post Deposition

Cuprous oxide (Cu2O) has a high optical absorption coefficient and favourable electrical properties, which make Cu2O thin films attractive for photovoltaic applications. Using reactive radio-frequency magnetron sputtering, high quality Cu2O thin films with good carrier transport properties were prepared. This paper presents the characteristics of Cu2O thin films that were sputter deposited on quartz substrates and subjected to post-deposition rapid thermal annealing. The thickness of the thin films and the optical constants were determined by ellipsometry spectroscopy (SE). The optical transmittance increased in lower wavelength region after annealing at 900 ̊C in rapid thermal annealing (RTA). The structural and morphological properties of the Cu2O thin films were investigated by electronic scanning microscopy (SEM) and atomic force microscopy (AFM), whereas elemental analysis was performed by X-ray fluorescence spectroscopy (XRF). The carrier mobility, carrier density and film resistivity were changed after post-deposition rapid thermal annealing from respectively ~14 cm2/Vs, ~2.3 x 1015 cm-3 and ~193 Ωcm for the as-deposited Cu2O film to ~49 cm2/Vs, ~5.0 x 1014 cm-3 and ~218 Ωcm for the annealed Cu2O film. The investigation suggests that the sputter-deposited Cu2O thin films have good potential for application as absorber layers in solar cells.

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