Facile preparation of sol–gel-derived ultrathin and high-dielectric zirconia films for capacitor devices

2012 ◽  
Vol 258 (24) ◽  
pp. 10084-10088 ◽  
Author(s):  
Hsin-Chiang You ◽  
Chun-Ming Chang ◽  
Tzeng-Feng Liu ◽  
Chih-Chia Cheng ◽  
Feng-Chih Chang ◽  
...  
Author(s):  
V. Kaushik ◽  
P. Maniar ◽  
J. Olowolafe ◽  
R. Jones ◽  
A. Campbell ◽  
...  

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.


2005 ◽  
Vol 36 (1) ◽  
pp. 25-32 ◽  
Author(s):  
A. Mehner ◽  
W. Datchary ◽  
N. Bleil ◽  
H.-W. Zoch ◽  
M. J. Klopfstein ◽  
...  

1992 ◽  
Vol 286 ◽  
Author(s):  
G.C. Vezzoli ◽  
M.F. Chen

ABSTRACTA nanocomposite of clusters of gold atoms in a silica gel matrix has been prepared by the sol-gel technique through reduction of gold chloride. This composite was fabricated to explore novel techniques for materialsengineering new high dielectric strength substances for capacitor applications. The gold islands amidst the silica gel sea are materials-designed to utilize the percolation threshhold phenomenon to create a peak in the dielectricconstant as a function of optimal topology. Experimental results indicate an average dielectric constant of the order of 5000 at 1 kHz, and a maximum versus temperature at ∼ −100°C. Electron microscope and microprobe analysis indicate ellipsoidal Au particles or clusters of a dimension ranging from a hundred angstroms to several thousand angstroms.


2013 ◽  
Vol 03 (01) ◽  
pp. 1350001 ◽  
Author(s):  
Huafei Lu ◽  
Yuanhua Lin ◽  
Jiancong Yuan ◽  
Cewen Nan ◽  
Kexin Chen

To investigate the multi-functional ceramics with both high permittivity and large nonlinear coefficient, we have prepared rare-earth Tb -and- Co doped ZnO and TiO 2-rich CaCu3Ti4O12 (TCCTO) powders by chemical co-precipitation and sol–gel methods respectively, and then obtained the TCCTO/ ZnO composite ceramics, sintered at 1100°C for 3 h in air. Analyzing the composite ceramics of the microstructure and phase composition indicated that the composite ceramics were composed of the main phases of ZnO and CaCu3Ti4O12 (CCTO). Our results revealed that the TCCTO/ ZnO composite ceramics showed both high dielectric and good nonlinear electrical behaviors. The composite ceramic of TCCTO: ZnO = 0.3 exhibited a high dielectric constant of ~210(1 kHz) with a nonlinear coefficient of ~11. The dielectric behavior of TCCTO/ ZnO composite could be explained by the mixture rule. With the high dielectric permittivity and tunable varistor behaviors, the composite ceramics has a potential application for the higher voltage transportation devices.


2019 ◽  
Vol 34 (24) ◽  
pp. 4066-4075
Author(s):  
Mingliang Sun ◽  
Tianbo Zhao ◽  
Zhaofei Ma ◽  
Zunfeng Li

Abstract


2020 ◽  
Vol 34 (06) ◽  
pp. 2050033 ◽  
Author(s):  
Mohd Saleem ◽  
S. Tiwari ◽  
M. Soni ◽  
N. Bajpai ◽  
Ashutosh Mishra

Titanium ([Formula: see text])-doped nanoparticles of the type [Formula: see text] [[Formula: see text], [Formula: see text]] are reported in this study. The samples were synthesized by citric acid assisted sol–gel auto combustion (SGAC) method. The samples are characterized by X-ray diffraction (XRD), Raman, Field emission scanning electron microscopy (FESEM), Energy dispersive analysis of X-rays (EDAX) and Fourier transform infra-red (FTIR) techniques for structural studies. Further, for optical properties, UV-Vis technique has been used. In addition, samples were studied for dielectric properties. Room-temperature XRD data study reveals the sample formation with wurtzite hexagonal structure exhibiting space group [Formula: see text]mc also confirmed from Rietveld refinement of XRD data. Raman spectra displays characteristic active phonon modes in pristine [Formula: see text] and doped [Formula: see text]. UV-Vis diffused reflectance spectroscopy analysis infer bandgap values of 3.14 and 3.12 eV for [Formula: see text] and [Formula: see text], respectively. The dielectric studies confirmed high dielectric constant for [Formula: see text] compared to pristine [Formula: see text]. A non-Debye character with spread of relaxation times was witnessed from impedance study.


2008 ◽  
Vol 368-372 ◽  
pp. 1817-1819
Author(s):  
Cui Hua Zhao ◽  
Bo Ping Zhang ◽  
Yong Liu ◽  
Song Jie Li

LixTixNi1-2xO (x =0, 10 and 20 at. %) thin films with 200 nm in thickness were deposited on Pt/Ti/SiO2/Si (100) by a sol-gel spin-coating method. All samples have a uniform microstructure. The grain sizes grew from 100 nm to 300 nm by co-doping Li and Ti. The LiTiNiO thin films consist of NiO, NiTiO3 and Li2NiO2, while the Li-free thin films consist of NiO, NiTiO3 and NiTi0.99O3. The dielectric properties of the LiTiNiO thin films improved obviously by co-doping Li and Ti, but excess Li increases the amount of Li2NiO2 phase and decreases the dielectric properties. The dielectric constants at 100 Hz for the Li0.1Ti0.1Ni0.8O and Li0.2Ti0.2Ni0.6O thin films are 506 and 388 respectively. Appropriate co-doping contents of Li and Ti are important to obtain a high dielectric property.


2015 ◽  
Vol 44 (7) ◽  
pp. 2243-2249 ◽  
Author(s):  
Xin Ouyang ◽  
Peng Cao ◽  
Saifang Huang ◽  
Weijun Zhang ◽  
Zhaohui Huang ◽  
...  

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