Oxygen background gas influence on pulsed laser deposition process of LaAlO3 and LaGaO3

2012 ◽  
Vol 258 (23) ◽  
pp. 9116-9122 ◽  
Author(s):  
S. Amoruso ◽  
C. Aruta ◽  
P. Aurino ◽  
R. Bruzzese ◽  
X. Wang ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Background Gas

Effects of Single-Crystalline GaN Target on GaN Thin Films in Pulsed Laser Deposition Process

2005 ◽  
Vol 44 (11) ◽  
pp. 7896-7900 ◽  
Author(s):  
Takahiro Nagata ◽  
Young-Zo Yoo ◽  
Parhat Ahmet ◽  
Toyohiro Chikyow
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Single Crystalline

scholarly journals Oxidation of ablated silicon during pulsed laser deposition in a background gas with different oxygen partial pressures

2019 ◽  
Vol 196 ◽  
pp. 00008
Author(s):  
Sergey V. Starinskiy ◽  
Alexey A. Rodionov ◽  
Yuri G. Shukhov ◽  
Alexander V. Bulgakov
Keyword(s):  
Optical Properties ◽  
Laser Beam ◽  
Pulsed Laser Deposition ◽  
Oxidation State ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxidation Degree ◽  
Total Oxidation ◽  
Partial Pressures ◽  
Background Gas

We have analysed changes in the oxidation state of SiOx films produced by pulsed laser deposition in a background gas with different partial pressures of oxygen. The optical properties of the films in IR range are shown to be close to those of SiO2 while the total oxidation degree is considerably less than 2. It is suggested that the film consists of oxidized and unoxidized regions due to preferential oxidation of the periphery of the silicon ablation plume during expansion. These regions are overlapping in the film if the laser beam is scanned on the target.

Pulsed laser deposition process of PLZT thin films using an infrared Nd:YAG laser

2006 ◽  
Vol 252 (10) ◽  
pp. 3783-3788 ◽  
Author(s):  
T. García ◽  
E. de Posada ◽  
P. Bartolo-Pérez ◽  
J.L. Peña ◽  
R. Diamant ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Nd:Yag Laser ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Plzt Thin Films

New developments of pulsed-laser deposition process

1998 ◽  
Author(s):  
Tatsuo Okada ◽  
Yoshiki Nakata ◽  
Junichi Muramoto ◽  
Mitsuo Maeda
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
New Developments

Cross-Sectional Nanoindentation of Alumina Thin Films Deposited by Pulsed Laser Deposition Process

2006 ◽  
Author(s):  
Sudheer Neralla ◽  
Sergey Yarmolenko ◽  
Dhananjay Kumar ◽  
Devdas Pai ◽  
Jag Sankar
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Hardness ◽  
Deposition Process ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Adhesion Properties ◽  
Force Microscopy ◽  
Atomic Force

Alumina is a widely used ceramic material due to its high hardness, wear resistance and dielectric properties. The study of phase transformation and its correlation to the mechanical properties of alumina is essential. In this study, interfacial adhesion properties of alumina thin films are studied using cross-sectional nanoindentation (CSN) technique. Alumina thin films are deposited at 200 and 700 °C, on Si (100) substrates with a weak Silica interface, using pulsed laser deposition (PLD) process. Effect of annealing on the surface morphology of the thin films is studied using atomic force microscopy. Xray diffraction studies revealed that alumina thin films are amorphous in nature at 200 °C and polycrystalline with predominant gamma alumina phase at 700 °C.

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