A comparative study of solution based CIGS thin film growth on different glass substrates

2011 ◽  
Vol 258 (1) ◽  
pp. 120-125 ◽  
Author(s):  
Se Jin Park ◽  
Eunjoo Lee ◽  
Hyo Sang Jeon ◽  
Se Jin Ahn ◽  
Min-Kyu Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Comparative Study ◽  
Film Growth ◽  
Thin Film Growth ◽  
Glass Substrates ◽  
Cigs Thin Film

The influence of pre-heating temperature on the CIGS thin film growth and device performance prepared in cracked-Se atmosphere

2015 ◽  
Vol 30 (10) ◽  
pp. 105012 ◽  
Author(s):  
Guangmin Li ◽  
Wei Liu ◽  
Yiming Liu ◽  
Shuping Lin ◽  
Xiaodong Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Heating Temperature ◽  
Thin Film Growth ◽  
Device Performance ◽  
Cigs Thin Film

Influence of deposition time on ZnS thin film growth over SiO2 and glass substrates

2013 ◽  
Vol 106 ◽  
pp. 49-51 ◽  
Author(s):  
P.A. Luque ◽  
M.A. Quevedo-Lopez ◽  
A. Olivas
Keyword(s):  
Thin Film ◽  
Deposition Time ◽  
Film Growth ◽  
Thin Film Growth ◽  
Glass Substrates

GaN:Eu Interrupted Growth Epitaxy (IGE): Thin Film Growth and Electroluminescent Devices

2005 ◽  
Vol 866 ◽  
Author(s):  
Chanaka Munasinghe ◽  
Andrew Steckl ◽  
Ei Ei Nyein ◽  
Uwe Hömmerich ◽  
Hongying Peng ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Growth Time ◽  
Electroluminescent Devices ◽  
Red Phosphors ◽  
Glass Substrates ◽  
Device Optimization ◽  
Emission Enhancement ◽  
The Eu

AbstractThe GaN:RE phosphor development plays a major role in the GaN:RE AC thick dielectric electroluminescent (TDEL) device optimization. In this paper we report on EL devices fabricated using Eu-doped GaN red phosphors films grown by interrupted growth epitaxy (IGE). IGE consists of a sequence of ON/OFF cycles of the Ga and Eu beams, while the N2 plasma is kept constant during the entire growth time. IGE growth of GaN:Eu resulted in significant enhancement in the Eu emission intensity based primarily at 620.5nm. The increase in the material crystallinity observed with the IGE phosphors appears to be the dominant cause of the emission enhancement. Thick dielectric EL devices fabricated on glass substrates using IGE-grown GaN:Eu have resulted in luminance of ∼1000 cd/m2.

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