Plasma-aided hydrogenation and Al-doping: Increasing the conductivity and optical transparency of ZnO transparent conducting oxide

2011 ◽  
Vol 257 (23) ◽  
pp. 9986-9990 ◽  
Author(s):  
T. Ong ◽  
L. Xu ◽  
T.A. van der Laan ◽  
S. Xu ◽  
K. Ostrikov
Keyword(s):  
Transparent Conducting Oxide ◽  
Optical Transparency ◽  
Al Doping ◽  
Transparent Conducting

scholarly journals Band gap and work function tailoring of SnO2 for improved transparent conducting ability in photovoltaics

2016 ◽  
Vol 4 (7) ◽  
pp. 1467-1475 ◽  
Author(s):  
Alex M. Ganose ◽  
David O. Scanlon
Keyword(s):  
Work Function ◽  
Band Gap ◽  
Effective Mass ◽  
Electron Affinity ◽  
Transparent Conducting Oxide ◽  
Optical Transparency ◽  
Electron Effective Mass ◽  
Transparent Conducting ◽  
Photovoltaic Applications

Alloying of PbO2 with SnO2 results in a material with a tuneable band gap, larger electron affinity and smaller electron effective mass, whilst maintaining high levels of optical transparency. These properties are expected to give rise to a more efficient transparent conducting oxide for use in photovoltaic applications.

scholarly journals Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide

2018 ◽  
Vol 2 (4) ◽  
Author(s):  
D. Ali ◽  
M. Z. Butt ◽  
C. Coughlan ◽  
D. Caffrey ◽  
I. V. Shvets ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Transparent Conducting Oxide ◽  
Transparent Conducting ◽  
Doped Zno

Insituinvestigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces

1989 ◽  
Vol 54 (21) ◽  
pp. 2088-2090 ◽  
Author(s):  
B. Drevillon ◽  
Satyendra Kumar ◽  
P. Roca i Cabarrocas ◽  
J. M. Siefert
Keyword(s):  
Amorphous Silicon ◽  
Transparent Conducting Oxide ◽  
Optoelectronic Properties ◽  
Transparent Conducting

Microstructure and Electrical Properties of AZO Films Prepared by RF Magnetron Sputtering

2011 ◽  
Vol 264-265 ◽  
pp. 754-759 ◽  
Author(s):  
Bakri Jufriadi ◽  
Agus Geter E. Sutjipto ◽  
R. Othman ◽  
R. Muhida
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Transparent Conducting Oxide ◽  
Rf Magnetron Sputtering ◽  
Flat Panel Displays ◽  
Emi Shielding ◽  
Transparent Conducting ◽  
Deposition Processes ◽  
Electro Magnetic ◽  
Static Discharge

AZO is an ideal replacement transparent conducting oxide (TCO) for ITO to all corresponding applications. The typical applications include: transparent electrodes for solar cells, flat panel displays, LCD electrodes, electro-magnetic compatibility (RF-EMI shielding) coatings, touch panel transparent contacts, static discharge dissipation. The production of useful and commercially attractive thin films using different deposition processes is very important parameter to investigate. A systematic study of the sputtering condition and their influenced on electrical and structural were studied. In this work, AZO films were deposited by RF magnetron sputtering at 200 °C. The result shows that the deposited time has influenced the characteristic of deposited AZO films. For a longer deposition time, thin film shows a uniform grain growth. The resistivity found minimum at the deposition time of 45 minutes. It can be considered that by reducing of the grain boundaries which enable the electron carries to conduct smoothly.

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