Fabrication of oriented tungsten nano-tips by field-assisted water etching

2011 ◽  
Vol 257 (20) ◽  
pp. 8427-8432 ◽  
Author(s):  
Jo Onoda ◽  
Seigi Mizuno
Keyword(s):  
Water Etching

scholarly journals A Green Selective Water-Etching Approach to MOF@Mesoporous SiO2 Yolk-Shell Nanoreactors with Enhanced Catalytic Stabilities

Matter ◽  
2020 ◽  
Vol 3 (2) ◽  
pp. 498-508 ◽  
Author(s):  
Shouxin Bao ◽  
Junyan Li ◽  
Buyuan Guan ◽  
Mingjun Jia ◽  
Osamu Terasaki ◽  
...  
Keyword(s):  
Mesoporous Sio2 ◽  
Water Etching

Preparation of a porous nanostructured germanium from GeO2via a “reduction–alloying–dealloying” approach

2015 ◽  
Vol 3 (4) ◽  
pp. 1427-1430 ◽  
Author(s):  
Huayi Yin ◽  
Wei Xiao ◽  
Xuhui Mao ◽  
Hua Zhu ◽  
Dihua Wang
Keyword(s):  
Molten Salt ◽  
Electrochemical Reduction ◽  
Environmentally Friendly ◽  
Water Etching

Electrochemical reduction-cum-alloying in molten salt and subsequent water-etching dealloying for the controllable, affordable and environmentally friendly preparation of nanoporous germanium.

Ge/Si(100) Island and Wetting Layer Composition

2002 ◽  
Vol 749 ◽  
Author(s):  
Yangting Zhang ◽  
Jeff Drucker
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Water Soluble ◽  
Wetting Layer ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Substrate Temperatures ◽  
Water Etching ◽  
Layer Composition

ABSTRATCTEtching water soluble Ge-oxides was used to investigate Si interdiffusion into epitaxial Ge / Si(100) samples. The Ge coverage, θGe, was measured using Rutherford backscattering spectrometry (RBS) before and after water etching of samples grown at substrate temperatures between 400 °C and 650 °C. θGewas correlated with sample morphology determined using atomic force microscopy (AFM). The local Ge concentration was qualitatively assessed using energy dispersive x-ray (EDX) analysis. For samples grown at T=400 °C, water completely dissolves the islands and no Ge is detected by RBS. For samples grown at T=600 and 650 °C, AFM detects no change in the surface morphology and RBS indicates that θGedecreases by about 3 monolayers (ML). These results suggest that for growth at T=400 °C, both the islands and wetting layer are relatively pure Ge while for growth at T≥600 °C, the wetting layer is Ge rich compare to the SiGe alloy islands. EDX confirms this conclusion detecting no Ge signal between islands for etched samples grown at T≥600 °C. Our results suggest that for growth at T≥600 °C, Si interdiffusion into islands is through the region underneath the islands instead of from the wetting layer.

Gold Nanolayers Prepared on Poly(ethyleneterephtalate)

2007 ◽  
Vol 567-568 ◽  
pp. 261-264
Author(s):  
Jakub Siegel ◽  
Petr Slepička ◽  
Vladimír Kotál ◽  
Miroslava Novotná ◽  
Olga Bláhová ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Modification ◽  
Thin Layer ◽  
Plasma Treatment ◽  
Ftir Spectroscopy ◽  
Surface Topography ◽  
Thick Layer ◽  
Gold Coating ◽  
Experimental Conditions ◽  
Water Etching

Ablation, water etching and gold coating were studied on poly(ethyleneterephtalate) (PET) exposed to DC Ar plasma for 240 s at 8.3 W power. Au layers were sputtered on pristine and modified PET and their adhesion and topography were investigated. The roughness and changes of topography after plasma treatment, subsequent water etching and gold coating were followed using AFM microscopy. The thicknesses of ablated layer and water dissolved layer were determined using gravimetry. A nanoindentor was used to perform microstratch tests of sputtered layers. Water dissolving of thin layer after plasma treatment was confirmed by FTIR spectroscopy. We have found that under the present experimental conditions ca 30 nm thick layer of PET is plasma ablated. The surface topography changes dramatically and surface roughness increases. Another ca 16 nm thick layer was removed under present laboratory conditions after 24hour water etching. Subsequent coating with 50 nm thick gold layer increases surface roughness in all cases of surface modification.

Synthesis of free-standing Ga 2 O 3 films for flexible devices by water etching of Sr 3 Al 2 O 6 sacrificial layers

2019 ◽  
Vol 28 (1) ◽  
pp. 017305 ◽  
Author(s):  
Xia Wang ◽  
Zhen-Ping Wu ◽  
Wei Cui ◽  
Yu-Song Zhi ◽  
Zhi-Peng Li ◽  
...  
Keyword(s):  
Free Standing ◽  
Flexible Devices ◽  
Sacrificial Layers ◽  
Water Etching

Ablation and water etching of poly(ethylene) modified by argon plasma

2007 ◽  
Vol 92 (9) ◽  
pp. 1645-1649 ◽  
Author(s):  
V. Švorčík ◽  
V. Kotál ◽  
J. Siegel ◽  
P. Sajdl ◽  
A. Macková ◽  
...  
Keyword(s):  
Argon Plasma ◽  
Poly Ethylene ◽  
Water Etching

Activated mesoporous carbon nanofibers fabricated using water etching-assisted templating for high-performance electrochemical capacitors

2016 ◽  
Vol 18 (9) ◽  
pp. 6587-6594 ◽  
Author(s):  
Geon-Hyoung An ◽  
Bon-Ryul Koo ◽  
Hyo-Jin Ahn
Keyword(s):  
Carbon Nanofibers ◽  
Mesoporous Carbon ◽  
Acid Treatment ◽  
High Performance ◽  
Electrochemical Capacitors ◽  
Sequential Process ◽  
Capacitive Performance ◽  
Water Etching

Activated mesoporous carbon nanofibers are synthesized by a sequential process of electrospinning, water etching-assisted templating, and acid treatment, which exhibit outstanding capacitive performance.

Purified water etching of native oxides on heteroepitaxial CdTe thin films

2014 ◽  
Vol 47 (49) ◽  
pp. 495304 ◽  
Author(s):  
Kristoffer Meinander ◽  
Jessica L Carvalho ◽  
Carley Miki ◽  
Joshua Rideout ◽  
Stephen M Jovanovic ◽  
...  
Keyword(s):  
Thin Films ◽  
Native Oxides ◽  
Cdte Thin Films ◽  
Water Etching
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